Schottky barrier diodes with different metal on III nitride have been fabricated.
研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。
Using Schottky barrier diodes for D1 and D2 rather than common diodes reduces the low-level voltage on the bus, improving the noise margin.
使用肖特基二极管d1和D2，而不是普通二极管，为的是减少总线上低状态电压，改进噪声极限。
The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.
包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。
Based on the thermionic emission theory of the current density of4h-sic schottky barrier diodes under the forward bias the calculations for the schottky barrier height?
在分析4hsic肖特基势垒二极管正向电流热电子发射理论的基础上，计算了肖特基势垒高度？
Based on the thermionic emission theory of the current density of4h-sic schottky barrier diodes under the forward bias the calculations for the schottky barrier height?
在分析4hsic肖特基势垒二极管正向电流热电子发射理论的基础上，计算了肖特基势垒高度？
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