Microwave nW power sensor USES low barrier schottky diode (LBSD) as a component for testing the power of microwave signals.
本文介绍了使用低势垒肖特基二极管(LBSD)作为检测微波信号功率元件的微波毫微瓦功率传感器。
MP2109 Each converter integrates a main switch and a synchronous rectifier for high efficiency without an external Schottky diode.
每一路变换器都集成了一个主开关管和同步整流管以提高效率，无需外部肖特基二极管。
Also, the added schottky diode can be easily realized by schottky contact in the drain of the NMOSFET, which does not add chip area.
且该电路结构中肖特基二级管可在NMOSFET漏极直接制作肖特基金半接触来方便地实现，工艺简明可行又无须增加芯片面积。
If the panel has a very low voltage output (less than 33 cells in series), it is an advantage to employ a Schottky diode in this place.
如果面板上有一个非常低的输出电压(小于33系列中的细胞)，这是一个优势，采用肖特基二极管，在这个地方。
We started with the traditional modeling methods for Schottky diode and the small-signal model had been extracted by using optimization method.
论文从二极管传统的建模方法入手，建立了它的小信号模型，用优化的方法提取了小信号模型参数。
In this paper, some new multiple diode, such as varicap diode, switching diode, diode array, damper diode, modulation diode and Schottky diode are discussed.
本文介绍了几种新型复合二极管，包括变容二极管、开关二极管、二极管阵列、阻尼二极管、调制二极管和肖特基二极管等。
The schottky diode bypasses the gate resistor in the gate discharge path, so that there is no falling edge delay. The delay at the rising edge adds dead time.
为了增加更多的死区时间，补偿功率管的切换瞬间短暂延时，增加了一个肖特基二极管，与栅极电阻。
A shielding structure is disposed at the bottom and insulated from the trenched gate to provide shielding effect for both the trenched gate and the Schottky diode.
一隔离结构位于沟槽式栅极的底部并与沟槽式栅极绝缘，从而对沟槽式栅极与肖特基二极管两者提供屏蔽效应。
The Schottky diode and the method of making same same can meet the requirements of metal-oxide-semiconductor process and be suitable for integrated production of sub-micro IC also.
该肖特基二极管及其制造方法能够满足金属氧化物半导体工艺的需求，并适用于亚微米集成电路的集成生产。
The main products are: rectifier diodes, switching diodes, high efficiency diode, trigger diode, Schottky diode, electricity-saving lamps special diode, switching power supply special diode.
主要产品有：各类硅塑封整流二极管、开关二极管、高效率二极管、触发二极管、肖特基二极管、节能灯专用二极管、开关电源专用二极管。
Series resistance is an important factor confining the response speed of Schottky barrier diode.
串连电阻是制约肖特基二极管响应速度的一个关键因素。
To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管。
The compression characteristic of Schottky detector diode causes E-field probes highly non-linear over signal strength.
在整个测量范围内，肖特基检波二极管的压缩特性导致电场探头测量结果的非线性。
The invention belongs to the technical field of microelectronics, and in particular discloses a PN (positive-negative) junction and Schottky junction mixed type diode and a preparation method thereof.
本发明属于微电子技术领域，具体公开了一种PN结和肖特基结混合式二极管及其制备方法。
The main product is zener diode series, schottky barrier diode series, Transistor series, MosFET series, controlled silicon series, IC series.
主要产品有稳压二极管系列、肖特基二极管系列、三极管系列、场效应管系列、可控硅系列、IC产品系列。
K-band single balanced Schottky-barrier diode (SBD) mixer, suitable for automotive collision-avoidance radar, has been designed and fabricated.
本文给出了一种应用在汽车防撞雷达前端的单平衡环形混频器。
Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
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