A bipolar junction transistor relates to the technical field of a semiconductor power device.
双极结型晶体管，涉及半导体功率器件技术领域。
This invention discloses a semiconductor power device that includes a plurality of power transistor cells surrounded by a trench opened in a semiconductor substrate.
本发明公开一种半导体功率组件，其包括若干功率晶体管记忆胞，该记忆胞被开设于一半导体衬底中的沟槽所围绕。
Recently, duce to the improvements of semiconductor power device technology's and dropping of costs, more and more solid state transmitters have been adopted by various microwave systems.
近年来，由于半导体功率器件工艺的进步和成本的降低，微波固态发射机越来越多地为各类微波系统所采用。
A compact, low input power optical bistable device, combined with photodetector and optical fiber directional coupler and semiconductor laser diode, was presented.
介绍一种紧凑的、能以较低输入光功率工作的光学双稳器件，由光电检测器、光纤定向耦合器和半导体激光二极管组合而成的。
Today ordinary thyristor, GTO and IGBT play an important role in the applications of power semiconductor device for medium-voltage, and high power levels.
在目前的中电压大功率应用领域，占主导地位的功率半导体器件有晶闸管、GTO和IGBT等。
Thyristor is a high-power semiconductor device, and the standard of its rated current is temperature.
晶闸管属于大功率的半导体器件，决定其允许通过电流大小的标准之一是温度的高低。
First developed by ABB Company, IGCT ( Integrated Gate Commutated Thyristor)is a new sort of power semiconductor, which integrates its gate device with the thyristor.
集成门极换流晶闸管IGCT是一种新型的电力电子器件，是将门极驱动电路和门极换流晶闸管GCT集成于一体的器件。
First developed by ABB Company, IGCT ( Integrated Gate Commutated Thyristor)is a new sort of power semiconductor, which integrates its gate device with the thyristor.
集成门极换流晶闸管IGCT是一种新型的电力电子器件，是将门极驱动电路和门极换流晶闸管GCT集成于一体的器件。
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