• The principle and the main parameters of the dry etching for silicon dioxide are introduced.

    阐述二氧化硅干法蚀刻原理主要蚀刻参数

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  • The lithographic and etching process for a membrane creates a mesh of metal wires with silicon dioxide filling the space between them.

    薄膜先微影蚀刻制程制作出金属线路,线路之间则填入二氧化

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  • The lithographic and etching process for a membrane creates a mesh of metal wires with silicon dioxide filling the space between them.

    薄膜先微影蚀刻制程制作出金属线路,线路之间则填入二氧化

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