The invention relates to a method for recycling silicon tetrachloride as a by-product of polysilicon, belonging to the technical field of polysilicon production.
本发明涉及多晶硅副产物四氯化硅的回收利用方法，属于多晶硅生产技术领域。
The results have shown that the doping profile of the low pressure epitaxy of silane is steeper than those of silane epitaxy and silicon tetrachloride epitaxy at atmosphere pressure.
结果表明，与硅烷常压外延和四氯化硅常压外延相比，硅烷低压外延的杂质分布更为陡峭。
It is difficult to recycle a large amount of by product, silicon tetrachloride, which is the technical bottleneck existing in preparation of polycrystalline silicon by improved Siemens process.
改良西门子法制备多晶硅存在的技术瓶颈是大量副产物四氯化硅难以回收利用。
It is difficult to recycle a large amount of by product, silicon tetrachloride, which is the technical bottleneck existing in preparation of polycrystalline silicon by improved Siemens process.
改良西门子法制备多晶硅存在的技术瓶颈是大量副产物四氯化硅难以回收利用。
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