Compared with Czochralski method SGG single crystal growth with crucible capsuled vertical Bridgman method can improve crystal production and lower the cost efficiently.
与提拉法相比，采用坩埚密封的下降法生长sgg单晶，可以显著提高晶体产率，降低成本。
Aiming at the single crystal growth furnace situation and existing problem, a new style of single crystal growth furnace automatic control system with utility and economic is introduced.
文章针对某单晶拉伸炉的现状及存在的问题，介绍了一种经济实用的单晶炉自动化控制系统。
The principle of dynamic matrix control(DMC) was studied, and the application of DMC algorithm on the temperature control system for thermal field of single crystal growth fumace was given too.
研究了动态矩阵控制（DMC）算法在单晶炉热场温度控制系统中的应用。
The optical, physical and electro-optical properties of ZGP single crystal, and its synthesis, growth and applications were described in detail.
本文全面综述了该晶体的物性与电光性能，以及多晶原料的合成与单晶的生长方法和其应用前景。
The single crystal furnace is a special equipment of growth single crystal for LSI. This paper mainly introduces the design of vacuum system and charge system of crystal furnace.
单晶炉是生长大规模集成电路所需要硅单晶的专用设备。本文主要介绍了单晶炉的真空系统与充气系统的设计。
During the process of KDP crystal growth, the stability of the supersaturated solution greatly influences the optical quality of KDP single crystals.
在K DP晶体生长过程中，溶液的稳定性对KDP晶体的光学质量影响较大。
Void growth behavior plays an important role in the deformation, damage and rupture of the nickel-base single crystal superalloys at high temperature.
在高温状态下，镍基单晶超合金的变形、损伤及断裂分析中，孔洞的长大都起着主要的作用。
The kinetics of crystal growth was studied with a self-designed differential reactor that can be performed on a relatively single condition.
采用自行研制的微分型种分反应器，在较为单一的条件下了研究铝酸钠溶液中的晶体长大动力学。
This paper is based on the fast growth method of KDP single crystal.
本文是建立在KDP晶体快速生长方法基础之上。
In the paper, the shape stability of single crystal fibers grown by laser heating float zone growth method is studied with zone melt growth theory.
本文用晶体区熔生长理论对激光加热基座法生长的单晶光纤形状稳定问题作了研究。
This paper introduces the basic principle and process conditions of single crystal silicon growth by Cz method.
介绍了直拉法生长单晶硅的基本原理及工艺条件。
In order to make eligible detector, the fist step is the growth of high quality single crystal.
为了能够制作出合格的探测器，首先要生长出高质量的单晶体。
The main purpose of crystal Growth is to grow out of uniform shape and internal quality meeting the requirements of the single crystal.
晶体生长的主要目的是生长出外形均匀且内部品质满足要求的单晶体。
The surface smoothness of the single crystal substrate will be the most important factor, which influences the quality of the epitaxial film growth.
单晶基片的表面光洁度指标是影响后续薄膜生长质量的重要因素。
The reference parameter values are determined from the growth of a reference silicon single crystal.
从参考硅单晶的生长来确定参考参数的数值。
The single crystal furnace is a special equipment of growth single crystal for LSI.
炉是生长大规模集成电路所需要硅单晶的专用设备。
An analysis for the growth process of PbI2 single crystal by bridgman method has been made.
本文分析了用布里奇曼法生长碘化铅单晶体的结晶过程。
A scintillator crystal and a method for growing a scintillator crystal are provided which includes an as-grown Edge-defined Film-fed Growth (EFG) single crystal.
在此提供了一种闪烁体晶体以及用于生长闪烁体晶体的一种方法，该晶体包括一种生成态的限边送膜生长(efg)的单晶体。
A scintillator crystal and a method for growing a scintillator crystal are provided which includes an as-grown Edge-defined Film-fed Growth (EFG) single crystal.
在此提供了一种闪烁体晶体以及用于生长闪烁体晶体的一种方法，该晶体包括一种生成态的限边送膜生长(efg)的单晶体。
应用推荐