The immobility of semiconductor thin films is one of the effective methods to solve this problem, while sol-gel technology can realize the immobility of thin films.
制备半导体膜的固定化是解决这一问题的有效途径之一，而溶胶凝胶技术可以实现薄膜的固定化。
Homogeneous and transparent thin nanostructured titania films doped by Y3 + were prepared on glass substrates by sol gel processing and dip coating technique.
用溶胶-凝胶法和浸渍-提拉法工艺，在玻璃表面上制备了均匀、透明的钇离子(Y3 +)掺杂二氧化钛纳米薄膜。
Several methods of the preparation of ITO thin film with sol-gel technique were introduced. The ITO thin films were gotten by the inorganic method.
介绍了几种用溶胶凝胶法制备ito薄膜的工艺方法，用其中一种无机的方法成功制备了ITO透明导电膜。
Sol-gel method is widely used to synthesize nano-thin films.
溶胶-凝胶法是制备纳米薄膜的常用方法。
In this thesis, the sol-gel preparation and characteristics of the PST thin films were investigated in detail, and got the high quality PST thin films.
本工作对溶胶凝胶法制备p ST薄膜及其性能进行了较为详细的研究，获得了性能优越的PST薄膜。
Preparation and characteristics of preferred oriented ferroelectric thin films derived from sol-gel method are described.
本文综述了用溶胶—凝胶法制备择优取向铁电薄膜的工艺方法、特点和机理的最新研究进展；
Super-hydrophobic silica-based thin films were prepared by sol-gel processing. Both surface energy and roughness were controlled using colloidal silica particles and fluoroalkylsilane.
溶胶— 凝胶法制备超疏水薄膜，加入胶体二氧化硅粒子和氟硅烷控制薄膜表面粗糙度和表面化学性质。
The advances in the preparation ofnano-thin films by sol-gel method as well as its principle and characteristics are briefly reviewed. At the end of this paper, existing problems are also pointed out.
综述了溶胶-凝胶法制备纳米薄膜的原理与特点及其最新研究进展，最后指出了溶胶-凝胶法制备纳米薄膜今后急需解决的问题。
BST thin films sol gel technique epitaxial growth electrical properties.
标签薄膜溶胶-凝胶工艺外延生长电性能。
BST thin films sol gel technique epitaxial growth electrical properties.
标签薄膜溶胶-凝胶工艺外延生长电性能。
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