For devices formed on an oxide isolation layer, the poly - filled trench desirably penetrates this isolation layer thereby improving thermal conduction from the active regions to the substrate.
对于形成在氧化物隔离层上的器件，多晶填充的沟槽理想地穿透该隔离层从而改进从有源区到衬底的热传导。
For isolated LDMOS devices, the resistance between the lateral isolation wall (32) (tied to the source) and the buried layer (24) is reduced, thereby reducing substrate injection current.
对于隔离的LDMOS器件，横向隔离壁(32)(结合至源极)与埋层(24)之间的电阻减少，从而减少了衬底注入电流。
The semiconductor device includes a semiconductor substrate having an active region and a device isolation region defining the active region, and a resistor string formed over the active region.
该半导体器件包 括具有有源区和限定了有源区的器件隔离区的半导体衬底，以及形成于有源区上方的电阻串。
The semiconductor device includes a semiconductor substrate having an active region and a device isolation region defining the active region, and a resistor string formed over the active region.
该半导体器件包 括具有有源区和限定了有源区的器件隔离区的半导体衬底，以及形成于有源区上方的电阻串。
应用推荐