Ions sputtering could lead to the decrease of the thickness when the substrate negative bias voltage increases excessively.
负偏压过大对吸附离子产生反溅射作用导致涂层厚度减小。
However, when the substrate negative bias is more than 200 v, the surface roughness of the films is increased because of the increased graphite phase in the films.
当负偏压超过200V后，由于薄膜中石墨相增多，薄膜表面粗糙度将增大。
Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.
采用过滤阴极真空电弧技术并施加一定的衬底负偏压，在P（100）单晶硅片上制备出四面体非晶碳薄膜。
In this paper, the nucleation process of diamond by filament CVD was analyzed, and enhanced flux of ions by negative substrate bias was investigated in theory.
木文对热灯丝cvd沉积金刚石膜的核化过程进行了分析，从理论上研究了负衬底偏压增强活性离子的流量。
In the paper, the enhancing process of diamond nucleation by negative substrate bias in hot filament CVD system was analyzed.
对利用热灯丝cvd沉积金刚石膜时负衬底偏压增强金刚石的核化过程进行了分析。
The film component phase is dependent primarily on the negative bias of substrate.
膜的相组成主要是基板负偏压所决定的。
This paper mainly deals with the relationship between negative bias of substrate and component phases of magnetron-sputtering ion plated aluminium film of A3 steel.
本文主要论述基板负偏压与A 3钢基体磁控溅射离子镀铝膜相组成的关系。
In this paper, the nucleation process of diamond by filament CVD was analyzed, and enhanced flux of ions by negative substrate bias was investigated in theory.
本文对热灯丝cvd沉积金刚石膜的核化过程进行了分析，从理论上研究了负衬底偏压增强活性离子的流量。
The results showed that diffusion coefficient and diffusive distance increased with raising of negative substrate bias.
结果表明扩散系数和扩散距离都随着负衬底偏压的增大而增大。
Influence of discharge parameters such as RF power and working pressure on the negative self-bias voltage of substrate was investigated by an oscilloscope with a high voltage probe.
采用高压探头示波器系统研究了射频辉光放电参数对自偏压的影响规律。
The hydrogen and boron ion bombardments were performed by applying a negative bias voltage to the substrate during microwave plasma chemical vapor deposition process.
在微波等离子体化学气相沉积金刚石膜时，采用负偏压使氢和硼离子轰击金刚石膜表面。
The hydrogen and boron ion bombardments were performed by applying a negative bias voltage to the substrate during microwave plasma chemical vapor deposition process.
在微波等离子体化学气相沉积金刚石膜时，采用负偏压使氢和硼离子轰击金刚石膜表面。
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