The measured undestructivly theory for the surface energy level and the surface state density of semiconductors fay the method of photovoltages at changed temperatures is reported.
本文报道了应用变温光伏方法对半导体表面能级，表面态密度的非破坏性测量原理。
The measured undestructivly theory for the surface energy level and the surface state density of semiconductors fay the method of photovoltages at changed temperatures is reported.
本文报道了应用变温光伏方法对半导体表面能级，表面态密度的非破坏性测量原理。
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