In this paper are described an ISS thin film analyzer compatible with AES technique and all the necessary measures to switch from one technique to the other.
本文介绍一种与AES技术兼容的ISS薄膜分析器，并指出两者兼容时对仪器所必须采取的各种重要措施。
A novel low temperature switch material VO2 thin film was fabricated by ion-sputtering and annealing.
采用离子束溅射和退火工艺制备了一种新的相变型薄膜vo2。
When these switch components are composed of a thin film transistor, the testing device at least includes a switch wiring coupled to the gates of the thin film transistor.
当开关组件是由薄膜晶体管所构成时，测试装置更包括至少一开关配线，电性耦接至薄膜晶体管的闸极。
This paper analyses magnetic integration technology and thin-film technology, then brings out an idea of making integrated magnetics of switch power supply based on thin-film technology.
本文通过对磁集成技术与薄膜技术的分析，详尽介绍了薄膜电感器和薄膜变压器的设计以及损耗分析，提出了基于薄膜技术设计开关电源中的集成磁件。
This paper analyses magnetic integration technology and thin-film technology, then brings out an idea of making integrated magnetics of switch power supply based on thin-film technology.
本文通过对磁集成技术与薄膜技术的分析，详尽介绍了薄膜电感器和薄膜变压器的设计以及损耗分析，提出了基于薄膜技术设计开关电源中的集成磁件。
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