The factors of MOS transistor in the saturation region are analyzed, the mismatch models are optimized, and the model parameter extraction is done by least squares curve fitting method.
通过分析MOS管在饱和区失配因素，优化MOS管失配模型，提出用最小二乘曲线拟合法进行相关模型参数提取。
Thus, operating even under lower voltage of power source, each transistor can still be operated at saturation region normally.
因此即使在低电源电压操作下，各晶体管仍可正常地在饱和区工作。
Thus, operating even under lower voltage of power source, each transistor can still be operated at saturation region normally.
因此即使在低电源电压操作下，各晶体管仍可正常地在饱和区工作。
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