The accurate measurements of local micro-stress and strain in ultra deep sub-micron semiconductor structures usually resort to complicated microstructure analysis, measurement methods.
超深亚微米半导体结构中的局域微应力、应变的精确测量通常必须借助复杂的微结构分析、测量手段。
The accurate measurements of local micro-stress and strain in ultra deep sub-micron semiconductor structures usually resort to complicated microstructure analysis, measurement methods.
超深亚微米半导体结构中的局域微应力、应变的精确测量通常必须借助复杂的微结构分析、测量手段。
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