The invention provides a seed crystal support for growing a silicon carbide crystal with high quality by a physical vapor phase transport method.
本发明公开了一种高效生长碳化硅晶体的方法，即通过快速生长制备高质量导电型碳化硅晶体的方法。
The invention provides a seed crystal support for growing a silicon carbide crystal with high quality by a physical vapor phase transport method.
本发明公开了一种高效生长碳化硅晶体的方法，即通过快速生长制备高质量导电型碳化硅晶体的方法。
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