The dream output element, the vertical power FET, was used for the first time in this all-FET power amplifier.
梦幻输出，垂直场效应管FET功放，这个是第一个全FET功率放大器。
The present invention relates to one kind of FET with vertical channel structure and its preparation process.
本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。
The present invention relates to one kind of FET with polysilicon source and vertical channel structure and its preparation process.
本发明涉及一种具有垂直沟道结构的场效应晶体管，及它的制备方法。
The resulting G-FET devices meet customer requirements for high breakdown voltage, low vertical leakage and high-temperature operation.
将所得的G-FET器件满足客户要求为高击穿电压，低的垂直泄漏和高温操作。
The resulting G-FET devices meet customer requirements for high breakdown voltage, low vertical leakage and high-temperature operation.
将所得的G-FET器件满足客户要求为高击穿电压，低的垂直泄漏和高温操作。
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