数据的非易失性安全存储；
FIG. 6 is a block diagram of a non-volatile memory array.
图6是非易失性存储器阵列的框图。
FIG. 5 is a block diagram of a non-volatile memory system.
图5是非易失性存储器系统的框图。
The invention provides a non-volatile memory and a production method thereof.
本发明提供了一种非易失性存储器及其制作方法。
The device is manufactured using Atmel's high density non-volatile memory technology.
本芯片是以Atmel高密度非易失性存储器技术生产的。
An apparatus and method for managing a mapping table of a non-volatile memory are provided.
提供了一种管理非易失性存储器的映射表的设备和方法。
The invention further relates to method of protecting data in a non-volatile memory device.
本发明还 涉及一种对非易失性存储器器件中的数据进行保护的方法。
No one has yet worked out, though, how to make non-volatile memory out of organic transistors.
然而，仍没有人找到用有机晶体管制造“非易失性”存储器的方法。
This work focus on the evolution ways to study the Nanocrystal floating gate non-volatile memory devices.
本文从改进型方案入手，研究了纳米晶浮栅结构的非易失性存储技术。
A novel current mode sense amplifier with high read-speed for non-volatile memory application is developed.
对此，设计出一种具有较快读取速度的新型电流灵敏放大器。
A safety demand event can be stored in the non-volatile memory of the microprocessor and retrieved at any time.
安全需求事件可被存储在处理器的非易失性存储器中，并且可在任意时间恢复数据。
Full functionality includes transceiver communications, processing, non-volatile memory, power, input and output.
完全功能性包括收发机通信、处理、非易失性存储器、功率、输入和输出。
Cracking this problem—so that transistors can act as their own non-volatile memory—would make all computers faster.
解决这个问题——以便于让晶体管使用自身的非易失性半导体存储器—将会让所有的电脑运行速度更快。
Methods: Making use of large capacity and non - volatile memory store digital information about physiologic signal.
方法：利用大容量非易失性可电擦除的存储器存储生理信号的数字信息。
In this paper, we design this non-volatile memory chip in system level, module level, circuit level and physical level.
论文从系统级、模块级、电路级和物理级对非挥发性存储器芯片设计中的关键设计技术进行了研究。
In a modern computer, these instructions are held in a so-called non-volatile memory that is part of the processor itself.
在现代计算机中，这些指令被存储在一块被称为“非易失性”存储器上，而这块存储器属于处理器本身的一部分。
Resistive random access memory (RRAM) is one of the most promising candidates for next generation of non-volatile memory.
在各种新型非挥发性存储器中，阻变存储器(RRAM)具有成为下一代存储器的潜力。
MRAM is non-volatile memory, it is also power efficient and operates at ultra-high speed, the companies said in a joint statement.
据两家公司的联合声明称，MRAM是一种非易失性存储技术，它具备速度极快和耗电量低的优点。
The invention further provides a device for obtaining the address distribution information of failure bits in non-volatile memory.
本发明还提供了一种获取非挥发存储器中失效二进制位地址分布信息的装置。
This mode provides more protection, because the data is mirrored to another node, just in volatile memory instead of the non-volatile disk.
该模式提供更多保护，因为数据被镜像到另一个节点，这仅仅是针对易失性内存，而不是非易失性磁盘。
Embodiments of the invention provide a method and apparatus for accessing a non-volatile memory controller and a volatile memory via a Shared interface.
本发明的实施例提供了一种用于通过共用接口访问非易失性存储器控制器和易失性存储器的方法和设备。
As a result, they could potentially underpin a new generation of high density, non-volatile memory chips and logic circuits that mimic biological synapses.
因此，它们具有打造下一代高密度、非易失存储芯片和模仿生物神经节的逻辑电路的潜力。
The method also includes issuing commands to the selected one of the non-volatile memory controller and the volatile memory via the Shared control signals.
该方法还包括通过共用控制信号发出指令到选定的非易失性存储器控制器和易失性存储器中的一个。
Flash memory, which can come in several different technologies, is non-volatile memory, which means that its contents persist after its source of power is removed.
Flash内存(可以通过几种不同的技术实现)是一种非挥发性内存，这意味着断开电源之后其内容仍然保持下来。
The invention simultaneously discloses a production method of the nanocrystal floating gate non-volatile memory with the double-layer tunneling dielectric structure.
同时公开 了一种双层隧穿介质结构的纳米晶浮栅非易失存储器的制作方法。
The present invention presents a non-volatile memory and method for its operation that can reduce the amount of disturb in non-selected cells during an erase process.
本发明提供一种非易失性存储器及其操作方法，所述方法可减少在一擦除过程期间 未选择的单元中干扰的量。
Two complete front-panel settings (parameter selection and the sweep control) can be stored in a non-volatile memory and recalled at any time with a single key operation.
两个完整的前面板设置（参数选择和扫描控制）可以储存在非挥发性记忆体，并回顾在任何时候用一个关键作业。
The proposed structure circumvents this problem by creating non-volatile memory cells from standard CMOS transistors. Thus, no additional masking or processing steps are necessary.
这里提出的结构解决了这个问题，它利用标准CMOS晶体管来实现非易失性存储器，这样就不需要额外的掩膜或工艺步骤。
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
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