First principles and pseudopotential approaches have been used to investigate band structures and pressure dependence of the band-gaps of ordered zincblende Ge_(50)Sn_(50)alloy up to 9 GPa.
使用第一性原理和赝势方法研究了Ge_(50)Sn_(50)有序合金直到9GPa压力下的能带结构和带隙的压力依赖性。
First principles and pseudopotential approaches have been used to investigate band structures and pressure dependence of the band-gaps of ordered zincblende Ge_(50)Sn_(50)alloy up to 9 GPa.
使用第一性原理和赝势方法研究了Ge_(50)Sn_(50)有序合金直到9GPa压力下的能带结构和带隙的压力依赖性。
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