Chemical-Mechanical % polish (CMP) - a process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
化学-机械抛光(CMP) -平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
The mechanism of W-CMP was analyzed, the slurry makes a dual function of chemical erosion and mechanical lapping, has an important influence on the polishing rate.
分析了W -CMP的机理，抛光液对W材料表面具有化学腐蚀和机械研磨的双重作用，对抛光速率有着重要的影响。
Typical chemical mechanical polishing (CMP) of copper layers on semiconductor devices involves using a hard pad in the first step and a soft pad for the barrier layer removal step.
半导体器件上铜层化学机械抛光(CMP)的第一道工序一般需要使用一块硬抛光垫，在磨去阻挡层的工序中要用到软垫。
Chemical-Mechanical polish (CMP) - a process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
化学-机械抛光(CMP) -平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
Polishing pad is a very important component of the chemical-mechanical polishing (CMP) system.
抛光垫是化学机械抛光(CMP)系统的重要组成部分。
Single stage re-circulation filtrations were performed to remove oversized particles from colloidal silica based Chemical-Mechanical Polishing (CMP) slurry.
单步循环过滤，用来去除胶体硅基化学机械抛光(CMP)磨料中尺寸过大的微粒。
The copper chemical-mechanical polishing (CMP) which is the key planarization technology for ULSI manufacturing was discussed.
对用于甚大规模集成电路(ULSI)制造的关键平坦化工艺———铜化学机械抛光(CMP)技术进行了讨论。
Embarked from the component and structure of phosphate laser glass, its chemical-mechanical polishing (CMP) mechanism is analyzed.
从磷酸盐激光玻璃的成分和结构出发，分析了其化学机械抛光(CMP)机制。
Chemical Mechanical Polishing(CMP); abrasive particle; modeling; wafer;
机械化学抛光；磨粒；建模；芯片；
We have to face some Cu line issues after we use Cu to replace AL, such as the reliability with Cu and low K dielectric, and post-CMP (Chemical Mechanical Polishing) Cu line voids defect.
在引入电镀铜工艺的同时我们也不得不面对一些铜线工艺所特有的缺陷，如铜线和低K值介电质可靠性问题，以及电镀铜后产生的孔洞缺陷等问题。
We have to face some Cu line issues after we use Cu to replace AL, such as the reliability with Cu and low K dielectric, and post-CMP (Chemical Mechanical Polishing) Cu line voids defect.
在引入电镀铜工艺的同时我们也不得不面对一些铜线工艺所特有的缺陷，如铜线和低K值介电质可靠性问题，以及电镀铜后产生的孔洞缺陷等问题。
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