We're going to release a lot of energy for bonding, it's going to more than make up for the fact that we actually had to spend some energy to promote that electron.
在成键时，会释放大量能量，这比补偿激发电子，的能量要多。
The spatial configurations and bonding effects of Oxides of Nitrogen were explained by using the Valence-shell Electron Repulsion Theory, Hybrid-orbital Theory and Molecular orbital Theory.
用杂化轨道理论和分子轨道理论阐明了氮的氧化物成键类型，给出了分子空间构型及结构数据的解释。
An element bonding parameter topological index HLA is proposed based on topological principle and valence shell electron structural character.
基于元素键参数拓扑指数原理以及镧系元素价层电子结构特征构建了一种新的拓扑指数HLA。
In the preceding section we discussed the valence bond ( vb) or electron-pair theory of bonding.
在前面一节，我讨论了价键法&电子配对理论。
The scanning electron microscope analyses proves that the bonding mechanism of this process is liquid phase sintering, the change of surface freedom energy is the motivity for sintering.
扫描电镜分析证实，此复合粉末体系的激光烧结是基于液相烧结机制，表面自由能的改变是其烧结的原动力。
So again, this is an anti-bonding orbital, and what you see is that there is now less electron density between the two nuclei than there was when you had non-bonding.
同样的，这是反键轨道，你们看到当你有反键轨道的时候，两个原子核中间的电子密度更小了。
The scanning electron microscope analyses proves that the bonding mechanism of this process is liquid phase sintering, the change of surface freedom energy is the motivity for sin…
扫描电镜分析证实，此复合粉末体系的激光烧结是基于液相烧结机制，表面自由能的改变是其烧结的原动力。
So you can see that this is non-bonding, this is even worse than non-bonding, it's anti-bonding, because we're actually getting rid of electron density between the two nuclei.
所以你可以看到这是不成键的，它甚至比不成键还糟糕，它是反键，因为我们实际上是去掉了，两个原子核之间的电子。
Because the utility model adopts the form of electron-acceleration of ion-ion bonding so as to cause ion flow collected by a base plate (a workpiece) is only 10 to 15 percent of target current.
由于本实用新型偏压采用电子—离子加速—离子结合形式，使基板(工件)所收集到的离子流是靶电流的10—15%。
Because the utility model adopts the form of electron-acceleration of ion-ion bonding so as to cause ion flow collected by a base plate (a workpiece) is only 10 to 15 percent of target current.
由于本实用新型偏压采用电子—离子加速—离子结合形式，使基板(工件)所收集到的离子流是靶电流的10—15%。
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