A method is described for fabricating and antifuse structure (100) integrated with a semiconductor device such as a FINFET or planar CMOS devise.
本发明提供了与如FINFET或平面CMOS器件的半导体器件集成的反熔断器结构(100)及其制造方法。
Owing to their specialized structures and minute diameter, it can be utilized as a sensor device, semiconductor, or for components of integrated circuits.
由于他们特殊的结构和微小的直径，可以被用于传感器装置、半导体或者集成电路的组件中。
Therefore, a semiconductor device including a thin film integrated circuit can be manufactured easily.
因此，可以容易地制造包含薄膜集成电路的半导体器件。
The invention discloses the method of reclaiming and utilizing the silicon single crystal waste of semiconductor device and integrated circuit.
本发明公开了一种半导体器件与集成电路硅单晶废弃片的回收利用方法。
In particular, the invention is related to method for preparing semiconductor laser device with electroabsorption modulator and distributing Bragg reflection being integrated.
本发明涉及半导体激光器技术领域，特别是该器件内集成了电吸收调制器和分布布拉格反射半导体激光器的制作方法。
Therefor, it can effectively prevent a wire disconnection generated due to an increase of calorie applied to a semiconductor integrated circuit device.
由此能有效地防止由于施加到半导体集成电路器件的卡路里增加产生的线断开。
First developed by ABB Company, IGCT ( Integrated Gate Commutated Thyristor)is a new sort of power semiconductor, which integrates its gate device with the thyristor.
集成门极换流晶闸管IGCT是一种新型的电力电子器件，是将门极驱动电路和门极换流晶闸管GCT集成于一体的器件。
First developed by ABB Company, IGCT ( Integrated Gate Commutated Thyristor)is a new sort of power semiconductor, which integrates its gate device with the thyristor.
集成门极换流晶闸管IGCT是一种新型的电力电子器件，是将门极驱动电路和门极换流晶闸管GCT集成于一体的器件。
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