A technique for the fabrication of silicon cone cathode array by using anisotropic and isotropic etching has been reported in this paper.
详细研究了利用硅的各向异性腐蚀、各向同性腐蚀制备硅锥阴极阵列的工艺。
When remains the DC power, the decreasing of gas pressure can lead to the increasing of etching rate and the transformation from isotropic etching to anisotropic etching.
在直流功率一定时，工作气压的降低会导致刻蚀速率的增加，并且刻蚀由各向同性转变为各向异性。
Uniform etching allows for an efficient method of reducing a critical dimension of an electrically active structure by simple isotropic etch.
均匀的蚀刻允许通过简单的各向同性蚀刻来减小电活性构件的临界尺寸的有效方法。
Uniform etching allows for an efficient method of reducing a critical dimension of an electrically active structure by simple isotropic etch.
均匀的蚀刻允许通过简单的各向同性蚀刻来减小电活性构件的临界尺寸的有效方法。
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