A method of manufacturing a metal oxide semiconductor (500).
一种制造金属氧化物半导体的方法(500)。
A gate structure of the metal oxide semiconductor is etched (510).
将金属氧化物半导体的栅极构造蚀刻(510)。
High mobility P-channel power metal oxide semiconductor field effect transistors.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.
本发明提供了一种互补金属氧化物半导体（CMOS）装置及其制造方法。
As so far, there are tow kinds of image sensors: Charge Couple Device (CCD) and Complementary Metal Oxide Semiconductor (CMOS).
作为到目前为止，有拖曳种类图象传感器：充电夫妇设备(CCD)和互补金属氧化物半导体(CMOS)。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
The present invention brings forward a method for determining leakage currents in integrated circuit and metal oxide semiconductor element.
本发明提出一种集成电路及金属氧化物半导体元件中判断漏电流的方法。
The invention can improve the micro-loading effect while etching the grooves in the process manufacturing the stress metal oxide semiconductor device.
本发明可改善应变金属氧化物半导体器件的制造中刻蚀沟槽时的微负载效应。
A complementary metal oxide semiconductor (CMOS) readout integrated circuit (ROIC) for the sensitive material of vanadium dioxide (VO_2) was introduced.
介绍了一种针对二氧化钒敏感材料的CMOS读出电路(RO IC)。
Therefore, the metal oxide semiconductor can be used efficiently without additional manufacturing of a capacitor, and can save the chip size so as to reduce the cost.
如此可有效率地利用该金属氧化物半导体，并无须另外制作电容，可节省该芯片的尺寸大小，进而降低 成本。
The invention disclosed a metal oxide semiconductor element with voltage stabilization and electrostatic discharge protection and a manufacturing method thereof, which is applied to a chip.
本发明公开了一种具稳压及静电放电防护的金属氧化物半导体元件及其制造方法，其应用于一芯片。
The invention relates to a power supply structure of a memory, which comprises a charge pump, a readout voltage regulator, a decoupling capacitor and an MOS (Metal Oxide Semiconductor) transistor;
本发明的存储器的供电结构包括电荷泵、读出电压调节器、一个去耦电容和MOS晶体管；
The Schottky diode and the method of making same same can meet the requirements of metal-oxide-semiconductor process and be suitable for integrated production of sub-micro IC also.
该肖特基二极管及其制造方法能够满足金属氧化物半导体工艺的需求，并适用于亚微米集成电路的集成生产。
They studied the pressure dependence of electrical properties of metal-oxide semiconductor in a separate paper.
他们在另一篇文章中给出关于金属氧化物半导体电学特性对压强的依赖关系的研究结果。
A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET).
一种半导体器件，可以包括至少一个金属氧化物场效应晶体管(MOSFET)。
The oxygen - sensitive characters of metal - oxide semiconductor oxygensensor is re - ported.
研究了一种氧化物半导体型氧敏元件的氧敏特性。
A metal-oxide secondary emission film can be deposited on glass, ceramic or semiconductor substrates by thermal decomposition of an organo-metal alkoxide.
利用某些有机烷氧基金属化合物的热分解，可在玻璃、金属、陶瓷或半导体基片上沉积相应的金属氧化物次级发射膜。
The oxygen-sensitive characters of metal-oxide semiconductor oxygen sensor is re-ported.
研究了一种氧化物半导体型氧敏元件的氧敏特性。
Most of the fabrication methods of silicon single-electron transistors can be perfectly compatible with the si complementary metal-oxide-semiconductor (CMOS) technology.
大多数硅基单电子晶体管的制备方法可以很好地与主流的CMOS工艺兼容。
Ambipolar conduction is an essential and fundamental property in the application of the conventional inorganic complementary metal-oxide-semiconductor thin film transistors.
在传统互补式金氧半薄膜电晶体的应用上，双极性传输是一基本且重要的特性。
Ambipolar conduction is an essential and fundamental property in the application of the conventional inorganic complementary metal-oxide-semiconductor thin film transistors.
在传统互补式金氧半薄膜电晶体的应用上，双极性传输是一基本且重要的特性。
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