The method can increase electron mobility between the startup state current and the channel area.

此薄膜晶体管及薄膜晶体管的制造方法可增加开启状态电流与通道区的电子迁移率。

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The method can increase electron mobility between the startup state current and the channel area.

此薄膜晶体管及薄膜晶体管的制造方法可增加开启状态电流与通道区的电子迁移率。

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