The internal proximity effect correction in the electron beam lithography based on the variation of the pattern shape was studied.
针对三维曝光图形的结构特点，结合重复增量扫描方式，分别从水平和深度两个方向进行邻近效应校正。
By Fourier transform, produces a fast and accurate calculation for dose precompensation in proximity effect correction for electron beam lithography.
将付里叶变换法运用于电子束曝光的邻近效应校正中，形成了快速、准确的剂量校正法。
The present results not only can help to optimize the exposure conditions in Electron Beam Lithography, but also supply more accurate data for proximity effect correction.
本文的模拟结果不仅能为高能电子束光刻工艺优化曝光条件、降低邻近效应提供理论指导，而且能为进一步的邻近效应的校正提供更精确的数据。
Furthermore, the parameters acquired by this method are successfully used for proximity effect correction in electron beam lithography on the same experimental conditions.
此外，用此方法提取的电子散射参数被成功地用于相同实验条件下的电子束临近效应校正。
Many different schemes have been devised to minimize the proximity effect, such as pattern size correction and dose modulation.
有多种方法对邻近效应进行修正如剂量调整、图形调整等。
Many different schemes have been devised to minimize the proximity effect, such as pattern size correction and dose modulation.
有多种方法对邻近效应进行修正如剂量调整、图形调整等。
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