Dielectric breakdown of BST thin films prepared by RF sputtering is studied in this paper.
采用射频溅射制备BST薄膜，研究了薄膜的介电击穿特性。
Through the technology of RF and DC reactive sputtering manufacture, H2S gas sensors have been developed on silicon substrate on which a heater made of Pt were attached.
通过交流和直流反应溅射，我们以硅基片（表面上有白金加热电极）为基底制作H_2S气敏元件。
The results show that compared with parallel electrode method, RF resonance method has advantages such as shorter extraction time, lower collision loss and sputtering loss and higher collection ratio;
模拟结果表明，RF共振法与平行板静电场法相比，引出时间较短，碰撞损失和溅射损失较低，收集率较高；
Thin films of lead lanthanum zirconate titanate (PLZT) were deposited by rf magnetron sputtering from oxide targets onto unheated Si substrates.
用磁控射频溅射方法在不加热的硅衬底上沉积生长锆钛酸铅镧（PLZT）薄膜。
The effects of low-power(LP) buffers on the structural properties of ZnO thin films deposited under high power by RF magnetron sputtering have been investigated.
本文采用反应磁控溅射法和溶胶凝胶法制备了均匀致密的三氧化钨薄膜材料，对它的光学性质、表面形态、结构等进行了深入的研究。
Quadrupole mass spectrometer was used to analyze the plasma environment of RF magnetron sputtering PTFE target with pulsed bias.
采用四极质谱仪测量了试验参数对高压脉冲增强射频磁控溅射ptfe靶等离子体气氛的影响规律。
All samples were prepared by rf magnetron sputtering method.
所有样品采用射频辅助磁控溅射方法制备。
The plasma can be 4 generated by hot-cathode discharge or RF discharge of gas. In addition, the device has four metal plasma sources, two magnetron sputtering targets, cold and hot target supports.
真空室内的气体等离子体可由热灯丝或射频放电产生，4另外还配置了4个金属等离子体源、两套磁控溅射靶和冷却靶台。
High resistance AZO films are fabricated on quartz substrates by radiofrequency (RF) magnetron sputtering deposition method in the environment with high oxygen proportion.
在石英衬底上采用射频磁控溅射的方法制备高电阻azo薄膜，其中高电阻由高氧氩比环境得到。
The reaction parameters such as the parameters of RF-sputtering, the category of the chelation and the environment of the solution are investigated.
研究溅射参数、络合剂与反应溶液环境等反应参数对制备过程的影响。
The reaction parameters such as the parameters of RF-sputtering, the category of the chelation and the environment of the solution are investigated.
研究溅射参数、络合剂与反应溶液环境等反应参数对制备过程的影响。
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