A sacrificial layer (16) is formed overlying the substrate (12).
形成在衬底(12)上面的牺牲层(16)。
A dielectric layer (18) is formed overlying the sacrificial layer.
形成在牺牲层上面的电介质层(18)。
A method to study the sacrificial layer etching in nanometer is proposed after lots of experiments.
通过大量的实验研究，建立了一套纳米量级牺牲层腐蚀行为的实验研究方法。
The sacrificial layer is removed through an etching process such as chemical mechanical planarization.
该牺牲层是通过例如化学机械平面化的蚀刻工艺除去的。
Porous silicon used as a sacrificial layer has some important applications in surface micromachining technology.
多孔硅作为一种牺牲层材料，在表面硅微机械加工技术中有着重要的应用。
In the paper, computer aided design (CAD) technology is used to achieve simulation of sacrificial layer etching.
本文将利用计算机辅助设计(CAD)技术实现腐蚀过程的模拟。
The contact bulges under the bridge are achieved by the full etching and partial etching of the polyimide sacrificial layer.
在工艺上，特别采用了对聚酰亚胺牺牲层进行全刻蚀和半刻蚀的改进加工流程来实现桥背面的接触点。
Comparing with all the existing sacrificial layer materials, the photoresist being used as sacrificial layers has some advantages.
同现有的牺牲层材料相比，光致抗蚀剂作牺牲层材料具有一些优越性。
Instead of surface sacrificial layer and bulk micromachining technique, using polymer as thermal isolation material decreases cost and improves yield.
以聚合物材料作为绝热材料，避免了表面牺牲层工艺和体加工技术，降低了成本、提高了成品率。
The porous silicon as a sacrificial layer could be fabricated in locally defined areas on the si substrate, using the selective formation of porous silicon.
利用多孔硅形成的选择性，在指定的硅衬底区域制作多孔硅作牺牲层。
A lateral opening (34) is formed by removing a portion of the dielectric layer and the sacrificial layer which is located between two columns of metallic catalysts.
通过去除电介质层的一部分和位于金属催化剂的两个柱体之间的牺牲层而形成横向开口(34)。
Sacrificial layer process was proposed to protect the non-machined surface in this work and an experimental system was developed to shape overlay welded TC4 blades.
提出了牺牲层工艺保护非加工面，并建立实验系统，对堆焊修复后的TC4叶片进行电解修型。
In this paper, aimed layer-by-layer assembly deposition techniques, we have build free-standing poly (4-vinyl pyridine) membrane with perforated porous by preparing sacrificial layers.
本论文基于交替沉积技术利用牺牲层法制备一种新型的具有穿孔状多孔的自支持聚4 -乙烯基吡啶膜。
By covering a thin layer of Mg anode onto the surface of traditional Zn anode orAl anode, a new kind of sacrificial anode-composite sacrificial anode was developed.
在传统锌基或铝基牺牲阳极的外面包覆一薄层镁基牺牲阳极制备成一种比较新颖的牺牲阳极——复合牺牲阳极。
By covering a thin layer of Mg anode onto the surface of traditional Zn anode orAl anode, a new kind of sacrificial anode-composite sacrificial anode was developed.
在传统锌基或铝基牺牲阳极的外面包覆一薄层镁基牺牲阳极制备成一种比较新颖的牺牲阳极——复合牺牲阳极。
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