• Semiconductor device, semiconductor device manufacturing method, high carrier mobility transistor and light emitting device.

    半导体器件,半导体器件制造方法载流子迁移率晶体管发光器件。

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  • A method of manufacturing a semiconductor device includes forming an insulation pattern over a substrate.

    一种制造半导体器件方法包括衬底形成绝缘图形

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  • Provided are a semiconductor device and a method of manufacturing the same.

    本发明提供一种半导体器件及其制造方法

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  • Further, it is an object of the present invention to provide a method for manufacturing a semiconductor device that is small-sized, thin, and lightweight.

    此外,本发明目的提供尺寸薄型重量轻半导体器件制造方法

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  • The invention relates to a manufacturing method of semiconductor device.

    发明涉及一种半导体器件制造方法

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  • The invention provides a method for manufacturing semiconductor device.

    发明提供制造半导体装置方法

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  • The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof.

    发明提供一种薄膜晶体管及其制造方法,其中该晶体管沟道基本长度缩短微型化半导体装置

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  • Disclosed are a semiconductor device and a manufacturing method thereof.

    本发明公开了一种半导体器件及其制造方法

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  • A group management system, a semiconductor manufacturing device and an information processing method are provided.

    提供种群管理系统半导体制造装置以及信息处理方法

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  • Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.

    本发明提供了一种互补金属氧化物半导体CMOS装置及其制造方法

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  • Provided are an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor.

    本发明提供氧化物半导体材料和其制造方法电子装置效应晶体管

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  • Inorganic substrate with a thin silica type glass layer, method of manufacturing the aforementioned substrate, coating agent, and a semiconductor device.

    具有二氧化硅玻璃无机基底制备前述基底的方法涂布半导体器件

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  • Method for reducing metal, multilayer interconnection structure and manufacturing method for the same, and semiconductor device and manufacturing method for the same.

    金属还原方法多层互连结构制法半导体器件及制法。

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  • Solder film manufacturing method, heat sink furnished with solder film, and semiconductor-device-and-heat-sink junction.

    焊料制造方法装备焊料膜的散热装置,以及半导体器件与散热装置的连接体。

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  • Solder film manufacturing method, heat sink furnished with solder film, and semiconductor-device-and-heat-sink junction.

    焊料制造方法装备焊料膜的散热装置,以及半导体器件与散热装置的连接体。

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