The ground state energies of a shallow donor impurity near a sharp surface of a semi-infinite crystal are studied.
本文用变分法计算了半无限晶体近表面内浅态施主杂质的基态能量。
The results show that the binding energies of shallow donor impurity states strongly depend not only on the wire radius, but also on the applied electric field and the impurity position in the wire.
结果表明杂质态结合能不只是量子线半径的函数，它还随杂质位置，外电场强度发生变化。
The results show that the binding energies of shallow donor impurity states strongly depend not only on the wire radius, but also on the applied electric field and the impurity position in the wire.
结果表明杂质态结合能不只是量子线半径的函数，它还随杂质位置，外电场强度发生变化。
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