The film may be substantially silicon nitride.
该薄膜大致上可为氮化硅。
Silicon nitride is a kind of excellent ceramic material.
氮化硅是优良的陶瓷材料，应用广泛。
The technology procedure of silicon nitride ball is introduced.
介绍了氮化硅球的加工工艺过程。
Silicon nitride ceramic is a kind of fairly good material for rolling bearings.
氮化硅陶瓷是一种较好的滚动轴承材料。
Silicon nitride can be used to grow quantum well for obtaining blue laser by dopanting.
氮化硅可以通过适当掺杂引入杂质能级，用于制造量子阱获得蓝光激光。
Some types of oxynitride glass concerned with silicon nitride are studied in the present paper.
本文分析了几种与氮化硅有关的氧氮化物玻璃的形成范围及其网络结构特征。
The novel application of silicon nitride to this application allows thin repair layers to be grown.
将氮化硅应用于此的新颖的应用可形成薄的修补层。
The result was a composite that was able to withstand twice as much pressure as unalloyed silicon nitride.
结果就是形成一种混合物，可以承受多于没有加入碳单原子层的氮化硅一倍的压力。
Shock behavior of silicon nitride ceramic was investigated by using a one-stage light gas gun facility.
用一级轻气炮冲击加载装置，对氮化硅陶瓷进行了冲击性能实验研究。
The experiment results on silicon nitride waveguide are in good agrement with the theoretical analysis.
在氮化硅波导上进行的工艺实验表明，实验结果与理论分析有很好的一致性。
Sintering AIDS were one of key factors affecting microstructure and properties of silicon nitride ceramics.
烧结助剂是影响氮化硅陶瓷的显微结构和性能的关键因素之一。
In the fabrication of solar cell, silicon nitride thin film is used as passivating film and anti-reflecting film.
硅基太阳能电池中，氮化硅用作钝化膜和减反射膜；
In the third chapter, results and discussions of substrate transfer of thick silicon nitride film were elaborated.
第三章为多孔硅表面氮化硅的淀积与转移技术的结果与讨论。
The effect of holding time on intergranular phase and mechanical property of GPS silicon nitride ceramics was studied.
研究了保温时间对气压烧结（GPS）氮化硅陶瓷晶界相及力学性能的影响。
The Modutek Nb Series silicon nitride bath is engineered to provide unparalleled process control, safety, and flexibility.
氮化硅蚀刻槽为您提供无与伦比的过程控制、安全性和灵活性。
In experiment, a series of silicon nitride thin films are prepared on cleaned silicon wafer by varying deposition parameters.
本实验通过系统地改变沉积参数，在经过清洗好的单晶硅片上沉积了一系列的氮化硅薄膜。
Infiltration strengthening is an effective means to improve the mechanical properties of Reaction Bonded Silicon Nitride(RBSN).
浸渍强化处理是提高反应烧结氮化硅性能的有效措施。
The cutting performances, the choices of machining parameters and the USES of silicon nitride ceramics cutting tools are introduced.
介绍了氮化硅陶瓷刀具的切削性能、切削用量的选择及其应用。
Double-layer transparent films, silicon nitride and silicon dioxide can be used as antireflection coating on silicon PIN photodetector.
氮化硅、二氧化硅双层透明膜可用作硅PIN光电探测器抗反射膜。
The devices were passivated by the thin film of Photo-CVD silicon nitride, we found that the reliability of the devices was to be raised.
采用光化学气相淀积(光cvd)氮化硅薄膜进行器件的表面钝化，使整个器件提高了可靠性。
The effect of particles on the electrical discharge machining (EDM) and cutting property of silicon nitride-based composites was analyzed.
分析了颗粒复合对氮化硅基陶瓷复合材料的火花放电加工性及切削性能所起的作用。
The amorphous silicon nitride film between amorphous silicon film and glass substrate is found to have no any effects on the crystallization.
玻璃衬底与非晶硅膜之间的非晶氮化硅膜对非晶硅膜的晶化没有明显影响。
The performance of radome materials are discussed such as microcrystalline glass, slip-cast fused silica, and silicon nitride etc in the paper.
介绍了微晶玻璃、石英陶瓷、氮化硅等几种天线罩材料的性能，重点探讨了可控密度氮化硅陶瓷材料的特点及在导弹天线罩上的应用。
In this paper, the influence of sintering technology on the microstructure and mechanical properties of the silicon nitride ceramic were studied.
研究了烧结技术对氮化硅陶瓷显微结构和力学性能的影响。
Its refractive index is higher than that of the traditional optical fiber material, silica, so silicon nitride has good optics confinement property.
其折射率比传统用作光纤的石英的折射率高，对光有较好的约束性能，因此在光波导方面可能会有更好的应用前景。
The effects of multi - indentation on the strength of silicon nitride ceramic under static loadings are studied by using the modified XJM -1 grinder.
本文在对XJM- 1型磨片机进行改装的基础上研究了静载多点压痕对氮化硅陶瓷强度的影响。
It shows severe hump without capping silicon nitride layer due to moisture diffusion during thermal anneal after inter layer oxide deposition by LPCVD.
它表明没有覆盖硅氮化层的严重驼峰取决于经过LPCVD的内部涂层氧化沉淀后化学处理期间的湿度扩散。
It shows severe hump without capping silicon nitride layer due to moisture diffusion during thermal anneal after inter layer oxide deposition by LPCVD.
它表明没有覆盖硅氮化层的严重驼峰取决于经过LPCVD的内部涂层氧化沉淀后化学处理期间的湿度扩散。
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