本研究采用常压化学气相沉积（CVD）的方法在金属铝基底上制备出硅氧化合物陶瓷膜层。
A new kind of silicon oxidic film on aluminum was prepared by chemical vapor deposition (CVD) in ambient pressure.
本研究采用常压化学气相沉积（CVD）的方法在金属铝基底上制备出硅氧化合物陶瓷膜层。
A new kind of silicon oxidic film on aluminum was prepared by chemical vapor deposition (CVD) in ambient pressure.
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