Using chemical mesa etching to increase the breakdown voltage.
化学腐蚀形成台面提高反向击穿电压；
Compact and lightweight, High breakdown voltage, Surface mounting type.
结构紧凑，重量轻，高击穿电压，表面贴装型。
Compact and lightweight, High breakdown voltage, Surface mounting type.
描述： 结构紧凑，重量轻，高击穿电压，表面安装型。
Moving triggering electrode down suitably can widen the range of breakdown voltage.
适当下移触发电极可明显增大可控击穿电压范围。
Outlining the characteristics of pseudospark, such as pressure and breakdown voltage.
概述了虚火花放电的特性，如工作气压和击穿电压等。
The results indicate that annealing treatment can heighten breakdown voltage of SBD remarkably.
结果表明，退火处理可以显著提高器件反向击穿电压。
The devices show good high-frequency performances, with large dynamic range and high breakdown voltage.
器件具有高频性能好，可使用动态范围大、栅击穿电压高等特点。
But as concerning microwave PIN diode of high breakdown voltage, the craft can't already meet the demands.
但就制备高反向击穿电压的微波pin二极管而言，这些工艺已不能满足要求。
This paper investigates the DC breakdown voltage in the two-phase mixture that is composed of air and mist.
研究了空气和雾组成的气液混合两相体在球-球电极中的直流击穿电压。
Test results show that the corona's onset and breakdown voltage both rise with increasing OD of the nozzle.
结果表明：喷嘴外径增大，起晕电压和击穿电压升高。
The new structure features high breakdown voltage, low on-resistance , and charge balance in the drift region.
结果表明这种结构具有高的击穿电压、低的导通电阻和漂移区中电荷平衡的特点。
Voltage regulator diode. Working voltage (nom) 180 V. Transient suppressor diode. Reverse breakdown voltage 168 v.
稳压二极管。工作电压(名称)180 V。瞬态抑制二极管。反向击穿电压168V。
The Source-Measure Unit can also test other diode parameters, including forward voltage drop and breakdown voltage.
源-测量单元还可以测量其它的二极管参数，包括正向电压降和击穿电压。
Insulating Oil Testers is a kind of effective tool for testing the dielectric oil breakdown voltage in power field.
绝缘油击穿电压测试仪就是电力系统中测试绝缘油耐压强度的测试仪器。
Calculation of punch through limited breakdown voltage for parallel plane junction has been examined in this paper.
本文研究平行平面穿通结击穿电压的计算。
The paper also presents the results about dielectrical breakdown voltage test and dielectrical strength for the coal.
本文还报告了同种煤的绝缘击穿电压及绝缘强度。
The experiments show that the microstructure of annealed sample is favourable to improving reverse breakdown voltage.
实验表明，退火后样品的微观结构有利于提高反向击穿电压。
The results are summarized, so as to express the breakdown voltage as nonlinear function of the spacing of the contact.
试验结果证明，触头间隙的击穿电压是触头间距的非线性函数。
The breakdown voltage plays an important role in predicting remaining life of the large generator ground wall insulation.
击穿电压在大电机主绝缘寿命评估中有着重要的作用。
Breakdown voltage is not only a key characteristic of ac ceramic capacitors, but also the most difficult technical barrier.
击穿破坏电压是交流瓷介电容器最主要的技术参数，也是最难解决的技术难题。
The result showed that burying sintering process may make breakdown voltage smaller and apparent dielectric constant bigger.
结果表明，采取粉料埋烧可以明显降低压敏电压、提高介电常数。
The effect of oxygenic ion and organic of composition of electrolyte on the breakdown voltage of wet tantalum capacitors was .
该文研究了电解质中的负离子浓度及有机物的含量对液体钽电解电容器闪火电压的影响。
The measurement has shown that the devices have higher associated gain, higher gate-drain breakdown voltage and lower noise figure.
测试表明，器件具有高增益、高栅-漏击穿及低噪声特性。
Measure the reverse breakdown voltage by sourcing a specified re verse current bias, then measuring the voltage drop across the diode.
通过施加规定的反向偏流，然后测量二极管两端的电压，即可测得反向偏置电流。
This paper in theory analysizes some measures adopted for increasing breakdown voltage between gaseous gaps in high voltage switchgear.
从理论上分析了高压开关设备中提高气体间隙击穿电压的几项措施。
As shown in Diagram 1, as from the voltage Uc, the leakage current increases very swiftly and the breakdown voltage is reached for value ue.
正如图1所示，而从电压Uc开始，漏电电流迅速增加，击穿电压达到Ue。
The SourceMeter instrument first performs the necessary DC tests, such as forward voltage, reverse breakdown voltage, and leakage current.
源表首先进行必要的直流测试，例如正向偏压、反向击穿电压和漏流。
This paper discusses the breakdown voltage of MMO (mixed metal oxide) net anode and oxygen depolarization for the large-scale storage tank.
探讨了大型储罐罐底m MO网状阳极的击穿电压和氧气去极化问题。
The application of ADI and high-order compact finite difference method to the breakdown voltage analysis of thin film SOI RESURF structure.
采用ADI与高阶紧致差分相结合的方法计算薄膜soiRESURF结构击穿电压。
The power dual base transistor (DUBAT) has been designed and fabricated by increasing the breakdown voltage and current capacity of the device.
在重点考虑了提高击穿电压和增大电流容量的基础上，设计并研制出功率型dubat。
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