Chemical vapour deposition is a preferable method.
化学气相沉积法是最可行的方法。
The present article introduces a new technique of chemical vapour deposition titanium Carbide.
本文介绍了一种新的化学气相沉积碳化钛方法。
Helical carbon nanotubes were synthesized by a chemical vapour deposition method from both silica aerogels and silica xerogels containing catalysts.
采用气凝胶与干凝胶两种催化剂载体通过化学气相淀积方法制备出螺旋状的碳纳米管。
Several methods are used in preparation of FTO, which include chemical vapour deposition (CVD), sputtering, thermal evaporation and sol-gel technique.
已经有几种方法用于制备FTO薄膜，包括气相沉积法（CVD）、溅射、热蒸发法、溶胶凝胶法。
This paper mainly introduces application of chemical vapour deposition (CVD) technology to the cold-drawn dies and relevant methods to make dies by using this technology.
本文主要介绍化学气相沉积(CVD)技术应用于冷拔模具以及采用该技术的模具在制作过程中的几个问题。
In general, the carbide coating of chemical vapour deposition resists wear. But these surface coatings have a high roughness, which causes violent wear in the matched test pieces.
化学气相沉积的碳化物镀层一般很耐磨，但这些表面层镀后的粗糙度较高，会使与之相配的试件受到剧烈磨损。
Vapour epitaxial grown single-crystal diamond film on diamond surface was obtained by microwave reinforced chemical vapour deposition method, using hydrogen, aceton vapour as source of gas.
用氢气、丙酮蒸汽为源气体，通过微波增强的化学气相沉积方法，实现了在金刚石表面气相外延生长单晶金刚石薄膜。
Coating by physical vapour deposition (PVD), coating by chemical vapour deposition (CVD) and surface layer modification by ion implantation, all three are being tested and are partly in use.
涂层的化学气相沉积(CVD)和表面层改性的物理气相沉积(PVD)涂层的离子注入，所有三个正在受到考验，并部分使用。
In the present paper, the relation between diamond nucleation density and synthesis conditions is studied for the diamond thin film synthesized by hot filament chemical vapour deposition method.
本文研究了用热灯丝化学气相沉积方法在单晶硅衬底上制备金刚石薄膜时其成核密度与制备条件的关系。
For the high technical maturity and the high deposition quality, traditional plasma enhanced chemical vapour deposition (PECVD) technology was wide applied in the large-scale industrial production.
传统等离子体增强化学气相沉积(PECVD)技术，工艺成熟，制备的薄膜质量高，较适合大规模工业化生产。
The results show that the vapour pressure and the mass loss rate of tantalum propoxide, tantalum butoxide and niobium ethoxide are suited for chemical vapor deposition.
结果表明，丙醇钽、丁醇钽和乙醇铌的蒸汽压大小能够满足化学气相沉积的要求，有足够的挥发速率。
The results show that the vapour pressure and the mass loss rate of tantalum propoxide, tantalum butoxide and niobium ethoxide are suited for chemical vapor deposition.
结果表明，丙醇钽、丁醇钽和乙醇铌的蒸汽压大小能够满足化学气相沉积的要求，有足够的挥发速率。
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