The device treated by the process is of small loss of drain radio-frequency current and increased electric breakdown strength of device as well as delivered power.
经过这样处理后的器件,漏极射频电流损失小,器件击穿电压和输出功率得以提高。
The device treated by the process is of small loss of drain radio-frequency current and increased electric breakdown strength of device as well as delivered power.
经过这样处理后的器件,漏极射频电流损失小,器件击穿电压和输出功率得以提高。
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