• The deep levels in electron irradiated CZ silicon single crystal grown in pure nitrogen protective atmosphere has been studied.

    本文研究电子辐照保护气氛生长的直拉硅单晶中引入的能级

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  • The multistable defect in electron-irradiated Fz silicon has been studied by usingDLTS.

    利用深能级瞬态谱(DLTS)对电子辐照区熔多稳态缺陷进行研究的结果表明。

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  • As-implanted silicon wafers are irradiated transiently using a large area low energy electron beam.

    本文报道了低能大面积电子束处理注砷硅片的实验结果。

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  • As-implanted silicon wafers are irradiated transiently using a large area low energy electron beam.

    本文报道了低能大面积电子束处理注砷硅片的实验结果。

    youdao

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