Chemical form of hafnium is perchlorate or nitrate.
铪的化学形态为过氯酸盐或硝酸盐。
Mainly because the quantity of hafnium, utilized in one chip, is negligibly small.
这主要是因为数量的铪，利用一个芯片，是微乎其微的小。
Specifically, the present invention provides a metal stack comprising a hafnium-based dielectric;
具体地，本发明提供的金属叠层包括：铪基介质；
The extraction separation process for zirconium and hafnium with MIBK was briefly reviewed in this paper.
简要评述了用甲基异丁基酮（ MIBK）萃取分离锆铪方法的基本原理、分离工艺和条件、萃取设备。
The hafnium crystal bar was produced by the iodide decomposition method from wast material of processing.
用碘化物热分解法由铪加工残料生产铪晶棒。
The post-irradiation effects of 30% TBP-Kerosene-HNO3 systems have been investigated by means of the hafnium number test.
本文借助铪指数实验研究了30％TBP-煤油-硝酸体系的辐照后效应。
The technology for separation of zirconium and hafnium is the key to prepare reactor-grade productions of zirconium and hafnium.
锆铪分离技术是生产核级锆和核级铪的核心技术。
So the research of preparation of ceramic scintillators containing hafnium compounds or hafnium has been becoming more and more popular.
因此制备铪化合物或含铪化合物的闪烁陶瓷，是近年的新材料研究热点之一。
Perhaps the most important use of sodium metal is as a reducing agent in producing high melting point metals, such as titanium and hafnium.
也许金属钠最重要的用途是作为还原剂生产高熔点金属，比如钛和铪。
The first they dealt with by coating the top of the device with oxides of hafnium, molybdenum and titanium, in layers about 100 nanometres thick.
第一，他们在装置的上处理和涂上铪，钼，钛氧化物层，这层物质仅有100纳米厚。
A new process of metallurgy of rare metals zirconium and hafnium with caustic soda instead of sodium carbonate to rub up zircon is examined.
研究了以氢氧化钠代替碳酸钠拌和锆英砂冶炼锆、铪稀有金属的新工艺。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
氮化镓是增长了等离子体辅助(111)和分子束外延(001)硅衬底上氮化硅缓冲层使用铪。
A method for determination of hafnium in zirconium under Ar-O_2 controlled atmosphere was developed and the conditions of ratio of Ar-O_2, excited current and exposed time were optimized.
研究了在氩氧控制气氛条件下锆中铪的分析条件，对氩氧比、激发电流、曝光时间等实验参数进行了选择。
A method for determination of hafnium in zirconium under Ar-O_2 controlled atmosphere was developed and the conditions of ratio of Ar-O_2, excited current and exposed time were optimized.
研究了在氩氧控制气氛条件下锆中铪的分析条件，对氩氧比、激发电流、曝光时间等实验参数进行了选择。
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