Test results show that the preparation of shallow junctions by ion implantation with proper annealing is an ideal technique for improvement in the device performances.
管芯研究结果表明，在适当的退火条件下，离子注入掺杂制备浅结是改善器件特性较为理想的方法。
Test results show that the preparation of shallow junctions by ion implantation with proper annealing is an ideal technique for improvement in the device performances.
管芯研究结果表明，在适当的退火条件下，离子注入掺杂制备浅结是改善器件特性较为理想的方法。
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