Device operational range is limited by the maximum junction temperature.
装置的运作范围是有限的最高结温。
The junction temperature (TJ) can be determined using the thermal diode in the processor core.
使用处理器器核心中的热敏二极管可以判断交叉点温度(TJ)。
Moreover, we design our owned unique heat sink to sure our junction temperature is lower than 45 degree.
此外，我们设计我们拥有独特的散热片，以确保我们的交界处的温度低于45度。
When a transistor dissipates power on work, its junction temperature distribution is commonly non-uniform.
晶体管在耗散功率时，结温分布一般不均匀。
We also analyzed the relationship between the junction temperature with LED heat power and the convection coefficient.
然后重分析了LED发热功率和对流交换系数对LED结温的影响。
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
有两个限制了晶体管的处理能力，功耗：平均交界处的温度和二次击穿。
In the junction temperature measurements, we get reasonable curves and also confirm the accuracy of the system's measurements further.
在接面温度量测上，我们得到了合理的曲线，也进一步地确定系统量测的准确度。
A method for measuring and controlling the junction temperature of power transistor during succession operation life test is proposed.
为了在试验周期中了解晶体管的结温，提出一种在功率晶体管稳态工作寿命试验过程中结温的测量与控制方法。
PN junction temperature sensor is used. 16 temperature signs are acquired at the same time. Proceeded data can be indicated, printed or controlled.
系统选用PN结温度传感器，可同时测取16个温度信号，经数据处理后可实时显示、打印或控制。
Should there be an uncompensated variation in the reference junction temperature, there will be a corresponding change in millivolt with a resultant error in temperature measurement.
假如参考端温度的变化没被补偿，就会有相应的毫伏电压变化，结果会导致温度测量的误差。
This paper analyzes the failure mechanism of semiconductor P N junction temperature sensors and presents a new design to reduce the internal stresses and methods to improve the processes.
通过失效形式，分析了半导体P-N结温度传感器的失效机理，介绍了为降低内应力而进行的设计和工艺改进。
The maximum acceptable junction temperature is different for C and I grade devices. If it is higher than the max. acceptable temperature, you may consider adding a heatsink or cooling fan.
C和I级器件允许的最高接合温度不同。如果温度高于允许的最高值，可能需要增加散热片或风扇。
Through analyze, we consider the P-N junction temperature, the concentration of phosphor, the thickness of the coating as the main reason for these electric-light-color parameters changes.
通过分析，发现P - N结的温度、荧光粉浓度与其涂覆的厚度是影响这些光色电参数变化的主要原因。
This paper presents a well water temperature monitor, and its use of PN junction temperature sensor as temperature components, integrated circuits used for ICL7126 and other A / D converter.
本文介绍一种井中水温监测仪，其采用PN结温度传感器作为感温元件，用集成电路ICL7126等作A/D转换器。
Transistor thermal spectrum, as a new method, different from the commonly infrared thermogram, is introduced to characterize the non-uniform property of the junction temperature distribution.
晶体管热谱是表示晶体管结温不均匀性的一种与热像图不同的新方法。
To make accurate temperature measurements with thermocouples, the reference junction temperature must remain constant. If it varies, suitable compensation for these variations must be provided.
要用热电偶实现精确的温度测量，参考端温度必须保持恒定；如果会变化，必须提供这些变化的适当补偿。
In addition, Thermal Force-Directed Placement Algorithm is used, detailed analysis of the device optimized layout of the component junction temperature and the average PCB temperature are shown.
另外，本文还运用热力导向优化算法，分析了电子元器件的优化布局对元器件的结点温度的影响。
A method of thermocouple cold junction temperature real time compensation was introduced, which utilizes digital sensor to measure temperature, and micro-controller to process the temperature data.
介绍采用数字温度传感器进行冷端测温，微控制器进行计算处理，对热电偶温度实时修正的方法。
If the valve body material can be welded, but very different thermal expansion coefficient, or changes in operating temperature range of a larger thread junction closure weld must be honey.
如果阀体的材料是可以焊接的，但膨胀系数差异很大，或者工作温度的变化幅度范围较大，螺纹连接部必须进行蜜封焊。
The sensitive temperature characteristics of PN junction inverse saturation current is fully utilized to obtain good temperature coefficient and PSRR with simple circuit structure.
该技术充分利用了PN结反向饱和电流是温度敏感函数的特性，使用简单的电路结构，达到了很好的温度特性和电源抑制性能。
Methods the respiratory signal is detected by the characteristics of diode junction voltage with temperature changes.
方法：该电路利用二极管的结电压随温度变化的特性实现呼吸信号的检测。
This paper introduces the PN junction sensor experimental system of temperature developed by the author according to the needs of teaching.
介绍了根据教学需要而设计开发的PN结温度传感器实验系统。
The positive junction volt tends towards the build-up potential while temperature goes to 0K.
当温度趋向0K时，正向结电压趋向内建电势差。
The relationship between the high peak power junction circulator and the bias magnetic field is described and a method to improve the temperature characteristic of this circulator is given.
阐述高功率结式环行器的温度特性与偏置磁场的内在联系，给出提高温度特性的方法。
Method: To choose best recipe and craft by doing experiment of face junction and survey its quality stability under the condition of chamber temperature and hasten experiment.
方法：采用正交试验的方法，选择最佳处方及工艺，并考察其室温条件下和加速试验后其质量稳定性。
The temperature behavior of the forward voltage VF of the P-N junction is discussed.
本文讨论了低温下P -N结的正向电压降v _ F随温度t变化的特性。
The temperature behavior of the forward voltage VF of the P-N junction is discussed.
本文讨论了低温下P -N结的正向电压降v _ F随温度t变化的特性。
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