To increase nucleation density, the methods of introducing defects on substrate surface are more effective in the diamond thin films growth by means of the low pressure vapor phase deposition.

在低压气相生长金刚石薄膜过程中，通过在衬底表面引入缺陷，通常是一种行之有效的提高成核密度的方法。

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To increase nucleation density, the methods of introducing defects on substrate surface are more effective in the diamond thin films growth by means of the low pressure vapor phase deposition.

在低压气相生长金刚石薄膜过程中，通过在衬底表面引入缺陷，通常是一种行之有效的提高成核密度的方法。

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