A new theory about minority carrier injection into polysilicon emitter has been proposed in this paper.

本文提出了一种新的多晶硅发射区少数载流子注入理论。

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It is shown that the measured minority carrier diffusion length increases with the injection level when the latter is high.

结果表明，当注入水平较高时，少子扩散长度的测量值变长。

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It is shown that the measured minority carrier diffusion length increases with the injection level when the latter is high.

结果表明，当注入水平较高时，少子扩散长度的测量值变长。

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