This company manages the MOCVD equipment consumables selling the mainland market.
本公司经营的MOCVD设备耗材畅销大陆市场。
Metal Organic Chemical Vapor Deposition (MOCVD) is a key technology in growing thin-films.
金属有机化学气相沉积(MOCVD)是一门制备薄膜材料的关键技术。
The aluminum-free two-quantum-well semiconductor laser which wavelength is 940 nm is made by MOCVD.
利用MOCVD研制了无铝双量子阱列阵半导体激光器。
The current status and future direction of application of MOCVD in nano and other areas are reviewed.
论述了MOCVD法在纳米领域和其他方面的应用以及其发展前景。
This paper proposes the new design idea in view of the insufficiency and the flaw of the 1st MOCVD system.
针对第一代MOCVD系统的不足和缺陷提出了全新的设计理念。
A method of controlling growth the VCSEL material by MOCVD with the in-situ optical monitoring were presented.
利用MOCVD的原位监测控制生长垂直腔面发射激光器材料。
The present invention relates to the MOCVD equipment and process of growing semiconductor ZnO film with wide band gap.
本发明涉及一种用于生长宽带隙半导体氧化锌薄膜的MOCVD设备及其工艺。
The device structure is optimized firstly, then the structure is grown by metal organic chemical vapor deposition (MOCVD).
首先优化设计了器件结构，并利用金属有机物化学气相淀积（MOCVD）进行了器件的外延生长。
Recent results with CBE show that CBE holds the potential as an important new epitaxial technique that goes beyond both MBE and MOCVD.
最近用化学束外延得到的结果表明CBE具有超过MBE和MOCVD的潜力而成为一种非常重要的新的外延技术。
MOCVD stands for Metalorganic Chemical Vapor Deposition, is one technology used to grow wafers from underlay with the MOCVD equipment.
MOCVD是金属有机化学气相沉积技术的简称，即通过MOCVD设备，在衬底上生长材料晶体的一种方法。
It provides a new method to the MOCVD control system design, and it is good for further researched and developed of the MOCVD control system.
它为MOCVD控制系统的设计提供了新的思路和方法，为进一步研发MOCVD控制系统奠定了基础。
This method improves the automatic control level of MOCVD and ensures the repeatability and stability of the process, makes MOCVD system gas...
该方法提高了MOCVD系统的自动化控制水平，确保了工艺的重复性和稳定性，使得MOCVD系统气体流量控制水平有显著提高。
The system of MOCVD was designed, assembled and debugged. Mo substrate was heated in a cold-wall MOCVD reactor in order to heat it more centrally;
设计、组装、调试了MOCVD系统，采用冷壁加热方式，对基体实现选择性加热；
Ir films were prepared by metal-organic chemical vapor deposition (MOCVD) method using iridium tri-acetylacetonate precursors on molybdenum substrates.
以乙酰丙酮铱为前驱体，采用金属有机化合物化学气相沉积(MOCVD)技术在钼基体上制备了铱薄膜。
MOCVD is an abbreviation form for Metal Organic Chemical Vapor Deposition, which is a method used to grow material crystal on substrate via MOCVD device.
MOCVD是金属有机物化学气相沉积技术的简称，即通过MOCVD设备，在衬底上生长材料晶体的一种方法。
In order to enhance the reliability and repeatability of the ferroelectric thin film preparation, the liquid source MOCVD system is designed based on PLC.
为了提高制备铁电薄膜的可靠性和重复性，设计了基于PLC控制的液态源MOCVD系统。
Template growth of gallium nitride nanowires was demonstrated by metal organic chemical vapor deposition (MOCVD) with carbon nanotubes as templates in this paper.
通过金属有机物化学气相沉积方法在碳纳米管模板上生长氮化镓纳米线束。
(MOCVD) is an advanced preparative technique. Coatings prepared by the method have many strongpoints such as high quality, good completeness and good controllability.
金属有机化学气相沉积法(MOCVD)是一种先进的涂层制备方法，采用此方法制备的涂层具有质量高、完整性好、厚度易于控制等优点。
This method improves the automatic control level of MOCVD and ensures the repeatability and stability of the process, which significantly improves the level of the...
该方法提高了MOCVD系统的自动化控制水平，确保了工艺的重复性和稳定性，使得MOCVD系统气体流量控制水平有显著提高。
The results of the imitation experiments show that the method of the compound control can be used to improve the control performance of the system temperature for MOCVD effectively.
仿真和实验表明，这种复合控制的方法能有效地改善金属有机化合物化学气相淀积系统温度的控制性能。
According to the characteristics and requirements of Xidian Univ. MOCVD system, a research and design about the MOCVD control system based on programmable logic controller are carried out.
针对西安电子科技大学MOCVD系统，根据MOCVD系统工艺要求，进行了基于可编程逻辑控制器的MOCVD设计与研究。
The MOCVD system is specifically introduced, and the gas flow automatic control method based on the mass flow controller(MFC) and programmable logic controller(PLC) is studied and analyzed.
研究分析了基于质量流量控制器、可编程序控制器和触摸屏的自动控制系统气体流量自动控制方法。
A new principle is adopted in designing low pressure MOCVD equipment. The principle is that the pressure is set and controlled separately in outlet and inlet of gas line of mass flow controller.
采用了一种新的设计原理，即以流量计为基准，将气体入口端和出口端压力双重分别统一控制，进行了低压MOCVD设计。
Because of the complicated transport process and invisible characteristics, domestic researchers have carried out few explorations on internal flow and temperature distribution of the MOCVD reactor.
由于制备薄膜的反应器中气体流动具有复杂和不可观测的特点，国内对MOCVD反应器内部流场和温度场的研究只处在起步阶段。
Because of the complicated transport process and invisible characteristics, domestic researchers have carried out few explorations on internal flow and temperature distribution of the MOCVD reactor.
由于制备薄膜的反应器中气体流动具有复杂和不可观测的特点，国内对MOCVD反应器内部流场和温度场的研究只处在起步阶段。
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