The new research of MOSFET-gate dielectric was summarized.
本文综述了MOSFET栅介质的最新研究状况。
The stability analysis of MOSFET used in RFIC design is presented in detail.
本文详细分析了用于射频集成电路设计的mos场效应管的稳定特性。
ISFET is based on MOSFET structure and used to measure biochemical parameter.
ISFET是基于MOS结构，用于生化参数测量的传感器。
The fundamental principles of the bulk-driven MOSFET and mixer are discussed.
讨论分析了混频器和衬底驱动MOSFET的工作原理。
This is done with an integrator which controls a power MOSFET as source follower.
这是通过一个集成的控制一个功率MOSFET 的源极跟随。
The linear and saturate portion of MOSFET static state behavior is also included.
而MOSFET的静态线性区和饱和区的特性也用于表示阳极电压。
The structure of a vertical multiple-gate MOSFET based on bipolar technology is presented.
提出了一种基于双极工艺的纵向多面栅MOSFET的结构和工艺。
Skilled with MOSFET device engineering, especially in its reliability and performance aspects.
具有MOSFET元件工程技能，其中，尤其著重于可靠度及高效能方面。
This method has the same device area and is completely compatible with the bulk MOSFET process.
这种抑制浮体效应的方法不增加器件面积，而且与体硅MOSFET工艺完全兼容。
The parameters for the MOSFET DC model are extracted by the L-Malgorithm in the optimization method.
本文采用最优化方法中的L - M方法，对MOSFET直流模型参数进行优化提取。
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation time.
此外，这种先进的MOSFET的目的是在雪崩和减刑承受高能量的时间。
The wire feeder timing system consists of MOSFET switch control circuit, PWM circuit and control circuit.
送丝调速系统由功率MOSFET开关控制电路、脉宽调制电路及控制电路构成。
In this paper, the switching process of power MOSFET is introduced based on its gate-charge characteristics.
本文先介绍了基于功率MOSFET的栅极电荷特性的开关过程；
The paper analyzes the phase-lock technique of serial resonant inverter with power MOSFET as switching device.
研究了以功率MOSFET为开关管的串联谐振逆变器的频率跟踪问题。
In addition, by analyzing the inside structure of MOSFET, three methods to quicken the pulse front edge are presented.
另外本文通过分析MOSFET的内部结构，从MOSFET驱动原理上寻求了几种加快输出脉冲前沿的方法。
Its dual UVLO feature protects the power MOSFET from damage in the event that the gate-drive or supply voltage is too low.
器件的双uvlo功能保护功率MOSFET不会因栅极驱动或电源电压过低而损坏。
Ultimate analysis magnetic elements' characteristic, transformer, inductance design and MOSFET switch component's shaping.
最后分析了磁性元件的特性，变压器，电感的设计和MOSFET开关器件的选型。
At least 3 years design experience of power supply circuit, analog circuit, digital circuit, MOSFET circuit and MCU circuit.
3年以上电源产品，模拟数字电路设计经验，熟悉mcu,MOSFET等元器件。
A new approach to improve the high-voltage vertical double-diffused MOSFET (VDMOSFET) body-diode recovery speed is proposed.
提出了一种提高高压垂直双扩散MOS场效应晶体管(VDMOSFET)的体二级管恢复速度的新方法。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
The threshold voltage and the peak of proportional difference for MOSFET devices will change after the uniform high electric field stress.
在均匀的高电场应力下，MOSFET器件的阈值电压和输出特性的比例差分峰值会有所改变。
This thesis pays more attention to the HF MOSFET drive circuit and characteristics of balancing parallel MOSFETs' currents in dynamic mode.
本文主要研究高频功率MOSFET的驱动电路和在动态开关模式下的并联均流特性。
The device size can be greatly shrunk with effectively suppressing short channel effect and parasitic bipolar effect in conventional MOSFET.
这种结构器件能有效降低困扰常规MOSFET的短沟效应和寄生的双极效应，能大幅度减小器件尺寸。
This thesis pays more attention to the drive circuit of high frequency power MOSFET, power regulation circuit and frequency-tracing circuit.
本文主要研究高频功率MOSFET的驱动电路、频率跟踪电路以及功率调节电路。
MPS700 series dc voltage constant-current power supply, is designed by using linear series MOSFET control mode of the ac input dc output power.
MPS700系列直流稳压稳流电源，是采用MOSFE T线性串联调整方式设计的交流输入直流输出电源。
The drain-source voltage (Fig. 28) starts oscillating at the end of the flyback phase and reaching the minimum of 100V when the MOSFET turns on.
漏源极电压（图28）在反射过程结束后并减小到100伏特时场效应晶体管导通。
Therefore, under the circumstances, several requirements and measures are proposed for high-speed MOSFET driver circuit and reducing MOSFET HF loss.
因此，针对这种情况，提出高速MOSFET驱动器应具备的几点要求以及降低MOSFET高频开关损耗的几项措施。
The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.
提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型。
The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.
提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型。
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