NAND flash offers higher capacities with significantly faster write and erase performance.
NAND flash提供更大容量的同时实现快速的写擦性能。
Compact flash was originally based on it, though later CARDS moved to the less expensive NAND flash.
小型房车闪光本来以它为基础，虽然较迟的卡片移到比较不贵反及闪光。
The other side of this way is significant deterioration of quality of NAND flash structures and cells.
这种方式的另一面是NAND闪存结构和单元质量的显着恶化。
Using TLC architecture, manufacturers can produced cheaper NAND flash chips and increase its capacity.
使用TLC的架构，制造商可以生产更便宜的NAND闪存芯片，并提高其容量。
Toshiba will continue to keep and maintain its NAND flash fabs. There appears to be no change on that front.
不过闪存业务方面，东芝的战略则没有任何变化，他们仍将继续保留其名下的NAND闪存芯片厂。
The JFFS2 algorithm was designed for NAND flash devices and also includes improved performance with compression.
JFFS2算法专门为NAND flash设备设计，并且改善压缩性能。
The implementation of FMNFS is significant for reducing the mounting time and lengthening the lifespan of NAND Flash.
论文中FMNFS的实现对减少文件系统的加载时间、延长NAND闪存的使用寿命有一定的意义。
It is based on the company's most advanced V-NAND flash memory chips and a specially-designed high-performance controller.
它是基于该公司的最先进的V - NAND闪存芯片和一个特别设计的高性能控制器。
The iPad USES NAND flash memory, which is smaller and USES less power than the hard drives commonly used in laptops and desktops.
iPad使用的NAND闪存，比传统台式机和笔记本配备的硬盘更小巧且耗能更低。
Apple was accused on late Sunday by anonymous industry sources of 'bullying' NAND flash memory suppliers through its purchasing tactics.
上周日，有某匿名厂商指控苹果在NAND闪存市场上“欺行霸市”，威逼闪存厂商。
In a NOR device, each block in the flash memory can be erased up to 100,000 times. NAND flash memories can be erased up to one million times.
在NOR设备中，flash内存中的每个块可被擦除100,000次，而在NAND flash内存中可达到一百万次。
In March, the company announced that it is expecting lower gross margins within its NAND flash memory business, which could put a dent in the bottom line.
在3月，英特尔公司曾宣布，公司NAND闪存业务上的利润增长较低。
The NAND flash memory and USB2.0 interface are introduced in the design of Dynamic Electrocardiogram to improve the DCG's performance and convenience.
在传统动态心电图 机的设计基础上，提出应用大容量NAND闪存和高速USB2.0接口，提高心电图 机的性能和易用性。
Toshiba, which holds around 35% of the world's NAND flash market, suffered a power outage in a key production facility in northern Japan during the disaster.
东芝持有全世界NAND闪存市场的35% 的份额，在这次灾难中其位于日本北部一处关键生产设施遭遇了电力短缺。
So the problem of the high recording speed with the invalid block of NAND flash and data inverse is settled, the reliability of the system is improved.
从而解决了闪存存在无效块和数据翻转时时，系统的高速可靠存储问题，提高了系统的可靠性。
NOR flash memory can typically be programmed a byte at a time, whereas NAND flash memory must be programmed in multi-byte bursts (typically, 512 bytes).
NORflash内存通常一次可以编写一个字节，而NAND flash内存必须编写多个字节(通常为512字节)。
The new plant will manufacture NAND flash memory chips, which are widely used in a host of products including MP3 players, cellphones and digital cameras.
新工厂将制造NAND闪存芯片，其广泛用于多种设备如mp3播放器、窝式移动电话、码相机等。
Micron is one of the world's largest companies focused on memory, storage and imaging semiconductor products-from DRAM to NAND Flash to CMOS image sensors.
美光科技有限公司是全球最大的半导体存储及影像产品制造商之一，其主要产品包括DRAM、NAND闪存和CMOS影像传感器。
This paper introduces the structure and attributes of flash memory. And the digital camera system based on NAND flash memory is then presented and described.
该文分析了目前常用的快闪存储器的结构和特性，在此基础上介绍了基于NAND闪存的数码相机系统。
NAND flash supply has reportedly become tighter as major chip producers Samsung Electronics, Toshiba, Micron and Hynix Semiconductor favor demand for Apple devices.
由于三星，东芝以及海力士等闪存芯片大厂需要优先满足苹果的需求，因此导致了闪存芯片供需状况越发紧张的状况。
Then the programming process, which is the difference between NAND FLASH and other storage media, is discussed. In the same time, the erase operation is also introduced.
讨论了NAND FLASH的写操作过程，这种写操作的特点也是FLASH有别于其它存储介质的地方，同时也对NAND FLASH的擦除操作做了介绍；
This is the second NAND flash device in production at the 20-nm class, joining a 64-Gbit 25-nm multi-layer cell NAND Flash from IM Flash Technologies, according to UBM TechInsights.
这是目前为止市面上第二款基于20nm级别制程的NAND闪存芯片产品，另外一款则是IMFlash生产的64Gbit密度的25nm制程产品。
E3 flasher is a special device to help you programme NAND and NOR flash data.
E3的闪光是一个特殊的装置，以帮助您计划NAND和NOR闪存的数据。
The invention relates to a method for accessing a NAND gate flash memory by an application protocol data unit, which belongs to the technical field of smart card application.
一种以应用协议数据单元访问与非门闪存存储器的方法，涉及涉及智能卡应用技术领域。
The advantages and disadvantages and the solution of the flash memory NAND-K9W8G08U0M from SAMSUNG is analyzed in detail by taking high resolution digital camera as a practical example.
并结合高分辨率数码相机实例分析了NAND型闪存K9W8G08的优缺点以及解决方案。
By main obstacle to the propagation of new interface is seen the fact that in the number of its supporting companies there are no Samsung, being now been the leader of the market For nAND-flash.
由主要障碍的繁殖新的接口被认为是事实，即在数量上，其支持的公司有没有三星，正在现已领导人对市场的NAND闪存。
By main obstacle to the propagation of new interface is seen the fact that in the number of its supporting companies there are no Samsung, being now been the leader of the market For nAND-flash.
由主要障碍的繁殖新的接口被认为是事实，即在数量上，其支持的公司有没有三星，正在现已领导人对市场的NAND闪存。
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