Portions of the oxide layer are removed to substantially planarize the trench-filled oxide layer as the first polysilicon layer.
所述氧化层的部分被移除，以使所述沟槽填充的氧化层作为第一多晶硅层基本平面化。
The aluminum surface of the oxide layer is an electrical insulator.
铝表面的氧化层是一种电的绝缘体。
Manganese oxide layer forming is a critical technique in producing Tantalum capacitor.
被膜是钽电容器生产的关键工艺。
This might damage the delicate red cuprous oxide layer we need to make to solar cell work.
这可能会损害微妙红色氧化亚铜层，我们需要使太阳能电池的工作。
This oxide layer is what renders the stainless steel passive and non-reactive to corrosion.
该氧化物层能使得不锈钢表面不活泼并不具反应性从而不易于腐蚀。
The silicon oxide layer is formed by reacting a first gas mixture and a second gas mixture.
氧化硅层是由第一个反应气体混合物和第二气体混合物。
The germanium oxide layer and the metal oxide layer are converted into a first dielectric layer.
将半导体氧化层与金属氧化物层转化成一第一介电层。
A method for forming a silicon oxide layer for use in integrated circuit fabrication is provided.
为形成了集成电路制造中使用的硅氧化层的方法提供。
Anodizing is a process of thickening the natural oxide layer that forms on the surface of aluminum.
阳极氧化是一种浓缩的天然氧化层形成的过程，对铝表面。
As the steel is removed from the pickling bath, a thin oxide layer forms immediately over the surface.
当从酸浸浴中取出钢时，其表面就会立即形成一层薄薄的氧化物。
An oxide layer may be between the silicon nitride layer and the surface of the silicon carbide layer.
在该氮化硅层和碳化硅层表面之间可以有氧化物。
For example, as shown in FIG. 8a, an oxide layer 810 optionally is patterned on a silicon substrate 820.
例如，如图8a所示，氧化层810选择性地在硅衬底820上形成图案。
As the laser fluence exceeds the threshold a mirror surface appears, otherwise, an oxide layer will be formed.
在阈值以上激光作用下不锈钢表面形成镜面，而在阈值以下则出现氧化层。
The introduced oxygen in the passivated procedure reacts with the catalyst surface to form the thin oxide layer.
而在表面钝化过程中引入的氧则在催化剂表面形成氧化薄层。
The metal oxide layer acts as a protecting layer to prevent deterioration of the phosphor due to ion bombardment.
该金属氧化物层起保护层的作用，以防止因离子轰击而破坏该磷光体。
The power supply of ac TIG welding can be used to weld aluminium and magnesium which surface has a firm oxide layer.
交流TIG焊接电源可用来焊接铝、镁等表面有致密氧化膜的金属。
Objective:To investigate the effect of porcelain bake cycles on oxide layer formed on cobalt-chromium alloy surface.
结论：在所有烤瓷程序结束后，应将钴铬合金支架进行彻底打磨、抛光。
The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.
该金属氧化物层可以在该沟道层与该源极和该漏极之间具有渐变的金属含量。
The surface brightness and depth are greatly decreased, the surface oxide layer formed gradually white, paint, shorten life.
漆面的亮度和深度都大大下降，使漆面渐渐发白，构成氧化层，缩短车漆的寿数。
During wear process oxide layer formed and covered the wear surface, which protected the wear surface and decrease the wear.
磨损过程中在磨损表面覆盖的氧化物层对涂层起到保护和减磨作用。
Production speed too slow, the bottom again, such as nickel oxide layer in gold slot oxidation (or gold reduction), peel tin.
产速太慢，底层再次氧化，如镍层在金槽氧化(或金还原)，剥锡。
Microhardness of the remelting coating is higher than that of spraying coating because of oxide layer and metallurgical bonding.
由于表面氧化层的存在和内部冶金结合的形成，重熔层硬度较喷涂层高。
The formation of oxide layer during tensile process at elevated temperature in air suppresses environmental embrittlement for the alloy.
在拉伸过程中形成的致密氧化铝薄膜能够有效地阻止氧向基体中扩散，减少环境脆性，提高合金的高温塑性。
The polycrystalline silicon layer is formed on the oxide layer and used for serving as an upper electrode plate of the high-voltage capacitor.
多晶硅层是形成于氧化层上，用以作为高压电容的上电极板。
In one embodiment, the method includes forming a germanium oxide layer over a substrate and forming a metal oxide layer over the germanium oxide layer.
在一实施例中，此方法包含在一基板上形成半导体氧化层以及在半导体氧化层上形成一金属氧化物层。
Through a CMP process, portions of the oxide layer are removed to substantially planarize the trench-filled oxide layer as the first polysilicon layer.
利用一化学机械研磨制程，移除该氧化 物层的部分区域，以使该填满沟槽的氧化物层与该第一多晶硅层大体上齐平。
Manganese content, binding ability of manganese oxide layer on quartz sand and zeolite substrates and stability of MOCS and MOCZ were also investigated.
分别从静态法方面研究了锰氧化物对铜和铅离子吸附性能，从静态法和动态法方面综合研究了MOCS和MOCZ对铜和铅离子吸附性能。
The high-voltage capacitor structure comprises a two-step diffusion drain electrode structural layer, an oxide layer and a polycrystalline silicon layer.
高压电容结构包括双重扩散漏极结构层、氧化层及多晶硅层。
The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.
第一个重要的来自热氧化组薄膜是栅氧化层，在它之下，源和漏之间就能形成导电通道。
The formation mechanism of oxide layer and the relationship between the oxide and the residual life of high temperature component had been introduced in this paper.
对高温构件的氧化层形成机理以及内氧化层与炉管剩余寿命的相关关系进行了阐述。
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