The polycrystalline silicon layer is formed on the oxide layer and used for serving as an upper electrode plate of the high-voltage capacitor.
多晶硅层是形成于氧化层上，用以作为高压电容的上电极板。
The high-voltage capacitor structure comprises a two-step diffusion drain electrode structural layer, an oxide layer and a polycrystalline silicon layer.
高压电容结构包括双重扩散漏极结构层、氧化层及多晶硅层。
The gate electrodes (16) of the NMOS transistors (a) are formed in a layer of n-type doped polycrystalline silicon (14) without germanium.
NMOS晶体管(A)的门电极(16)在n -型掺杂的不含锗的多晶硅层(14)上形成。
The gate electrodes (16) of the NMOS transistors (a) are formed in a layer of n-type doped polycrystalline silicon (14) without germanium.
NMOS晶体管(A)的门电极(16)在n -型掺杂的不含锗的多晶硅层(14)上形成。
应用推荐