DC chopping circuit with power MOSFET have been analyzed in the paper with the help of computer. On the basis of the analysis, a design method is given.
本文对使用功率MOSFET元件的直流斩波电路进行了计算机辅助分析，在分析的基础上给出了工程设计方法。
This is done with an integrator which controls a power MOSFET as source follower.
这是通过一个集成的控制一个功率MOSFET 的源极跟随。
The function of the IGBT inverter is to support utility fundamental voltage and to compensate the reactive power. The MOSFET inverter fulfills the function of harmonic current compensation.
IGBT逆变器的作用是提供基波电压，并补偿无功功率，MOSFET逆变器则实现消除谐波电流的功能。
The solid state switch device uses power MOSFET as soft switch, so, the spark doesn't appear when the circuit turn on or turn off.
固态开关部件采用电力MOSFET做软开关，使得电路通断时，不会出现打火花的现象。
MPS700 series dc voltage constant-current power supply, is designed by using linear series MOSFET control mode of the ac input dc output power.
MPS700系列直流稳压稳流电源，是采用MOSFE T线性串联调整方式设计的交流输入直流输出电源。
The paper analyzes the phase-lock technique of serial resonant inverter with power MOSFET as switching device.
研究了以功率MOSFET为开关管的串联谐振逆变器的频率跟踪问题。
In this paper, the switching process of power MOSFET is introduced based on its gate-charge characteristics.
本文先介绍了基于功率MOSFET的栅极电荷特性的开关过程；
Its dual UVLO feature protects the power MOSFET from damage in the event that the gate-drive or supply voltage is too low.
器件的双uvlo功能保护功率MOSFET不会因栅极驱动或电源电压过低而损坏。
The high density power MOSFET designs have been incorporated into DCDC buck converter.
高密度功率MOSFET在DCDC变换器里面得到了广泛应用。
Apply advanced reversing technology and imported MOSFET power switch.
采用先进的逆变技术和进口MOSFET功率开关器件。
At least 3 years design experience of power supply circuit, analog circuit, digital circuit, MOSFET circuit and MCU circuit.
3年以上电源产品，模拟数字电路设计经验，熟悉mcu,MOSFET等元器件。
The power source used 14 power file effect transistor MOSFET in power transformer second order; all the combinations of twist-coil could construct 18 different second orders.
供电电源则将14只功率场效应晶体管MOSFET接入电源变压器次级，两绕组的全部组合可构成18个不同扎数的次级。
The article introduces the performance and application of the SKAI automobile power system with low-voltage MOSFET or high-voltage IGBT power component.
本文介绍了带有低压MOSFET或高压igbt功率器件的SKAI汽车动力系统的性能和应用。
The hardware and software of a developed 8098 single-chip microcomputer controlled MOSFET precise spot welding power source have been introduced in the paper.
对所研制的由8098单片机控制的MOSFET精密点焊电源的硬件及软件进行了介绍。
The satisfactory tests of arc-ignition and good properties of welding process may prove this switched MOSFET arc welding power source to be an electronic power source with broad prospects.
利用所研制的开关式场效应管弧焊电源进行引弧试验和工艺 试验，结果表明，此电源具有良好的引 弧性能和工艺性能，是一种发展前景较远大的电子 弧焊电源。
This thesis pays more attention to the drive circuit of high frequency power MOSFET, power regulation circuit and frequency-tracing circuit.
本文主要研究高频功率MOSFET的驱动电路、频率跟踪电路以及功率调节电路。
Main circuit uses independent RC pulse generator and control circuit can control the main circuit based on 8051 single chip microcomputer and TC4427 high-speed power MOSFET driver.
其主电路采用了独立式RC脉冲放电回路，控制电路则通过8051单片机和TC4427高速MOSFET驱动器完成对主电路的控制。
The second is electronic devices of high-performance power semiconductor such as MOSFET and IGBT.
二是正在快速更新的高性能功率半导体MOSFET和IGBT等电力电子器件；
Single-chip switching power supply are produced especially for switching power supply, which integrate PWM and high voltage MOSFET together , and have perfect protection function.
单片开关电源是开关电源专用集成电路，他将脉宽调制电路与高压MOSFET开关管及驱动电路等集成在一起，具备完善的保护功能。
The requirements on power MOSFET in power management system continue to push manufacturers to produce devices with lower conduction and switching losses.
面对这样的需求，在电源管理系统中经常使用的功率MOSFET就需要做到更低的导通损耗和开关损耗。
The calculation and drafting method in the safe operation range of POwer MOSFET are studied in this paper.
本文研究了功率MOSFET管的安全工作区的计算及绘制方法。
Compact, and with improved power dissipation, MOSFET drives substantially improve motor performance and system response time.
紧凑，并与改善功耗，MOSFET的驱动器大大改善汽车的性能和系统响应时间。
This paper studies and analyses mathematically the typical main circuits of the new generation of arc welding inverters using IGBT, MOSFET as power semiconductor switching devices.
对新一代弧焊逆变器各种典型的主电路进行了较深入的数学分析和研究。
The main techniques used to decrease static power are:reduce current from substrate and mosfet gate.
减少静态功耗的主要技术是降低衬底电流和栅电流等。
Thus, since gain scales with drain current and power dissipation, a minimum drain current exists at which a MOSFET oscillator amplifier element supplies adequate gain for oscillation.
因增益与带漏电流和功耗成比例，一个最小漏电流会在MOS场效应管振荡放大器元件能够提供适当的增益用于振荡的时候出现。
Thus, since gain scales with drain current and power dissipation, a minimum drain current exists at which a MOSFET oscillator amplifier element supplies adequate gain for oscillation.
因增益与带漏电流和功耗成比例，一个最小漏电流会在MOS场效应管振荡放大器元件能够提供适当的增益用于振荡的时候出现。
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