At last, the effect of rapid thermal annealing on the electrical properties of HEMT material is studied.
最后我们研究了快速退火对HEMT材料电学性能的影响。
The results indicate that the pyrochlore phase was restrained successfully by layer-by-layer rapid thermal annealing method.
实验结果表明，逐层快速退火工艺可有效抑制焦绿石相的形成；
The results indicate that the pyrochlore phase is restrained successfully by the layer-by-layer rapid thermal annealing method.
结果表明：层层快速退火工艺，可有效抑制焦绿石相的形成。
Furthermore, we found that the luminescence efficiency of the deep radiative levels in the samples were also affected by rapid thermal annealing.
而且，发现在样品中的深辐射能级的荧光效率也受到快速热退火的影响。
Polycrystalline nickel silicide film formed on thin oxide by rapid thermal annealing (RTA) has been investigated by capacitance voltage ( C V ) measurements.
本文研究了在薄二氧化硅层上快速热退火（RTA）形成的多晶硅化镍膜的电特性。
Partially crystallized Ba ferrite thin films were prepared by the strict controlling of the rapid thermal annealing time for as deposited amorphous thin films.
对于沉积态非晶薄膜，通过严格控制其快速热处理时间，从而制备出了部分晶化钡铁氧体薄膜。
The CCTO films prepared with different preheating temperature after rapid thermal annealing treatment have the smaller dielectric loss, and the values lie in between 0.1~0.35.
不同预烧温度所制备的CCTO薄膜，经快速热退火处理后，其介电损耗值较小，基本在0.1~0.35之间。
Compared with conventional furnace annealing, PbTiO3 thin films by rapid thermal annealing had smaller, denser and uniform crystal grains in size with better crystallographic quality.
与常规晶化相比，快速晶化处理的薄膜结晶质量好，晶粒较小、分布均匀致密。
After rapid thermal annealing(RTA) in Ar atmosphera at high temperature, the flow pattern defects(FPDs) density decreased more sharply in Sb-doped wafers than that in lightly B-doped wafers.
研究了掺杂剂原子种类及快速热处理技术对大直径直拉硅单晶中空洞型微缺陷密度的影响。
The results show that a thermal annealing at the proper temperature of experiments can significantly improve the optical homogeneity of the crystals, especially for the crystal grown at a rapid speed.
结果表明，适当温度的退火处理能有效地提高晶体的光学均匀性，尤其是对快速生长的晶体质量提高更为显著。
The results show that a thermal annealing at the proper temperature of experiments can significantly improve the optical homogeneity of the crystals, especially for the crystal grown at a rapid speed.
结果表明，适当温度的退火处理能有效地提高晶体的光学均匀性，尤其是对快速生长的晶体质量提高更为显著。
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