The result is the Torrent chip, a semiconductor device that analyses genomes.
这一想法导致了Torrent芯片，一种可分析基因的半导体的诞生。
Semiconductor device simulation has manifested its ever-increasing importance for the design of miniature devices in VLSI end new discrete devices.
半导体器件模拟，对于设计VLSI中的微小尺寸器件或者是新型的半导体分立器件，都已越来越显得重要。
The invention provided a semiconductor device which has a very high tamper resistance to improper analysis means due to FIB processing or the like from rear surface.
本发明提供一种半导体器件，对利用从背面进行的FIB加工等实施的不正当解析手段具有极高的抗篡改性。
We briefly summarize the applications of PEEM to areas such as surface structure analysis, surface chemistry, magnetism, and semiconductor device characterization.
简要总结光电子显微术在表面结构分析，表面化学，磁学，以及半导体器件表征等方面的应用。
Porous membrane shaping composition, preparation method of porous membrane, porous membrane intercalation insulating film and semiconductor device.
多孔膜形成用组合物，多孔膜的制备方法，多孔膜、层间绝缘膜和半导体器件。
Optical disk device, semiconductor device, optical disk and recording method.
光盘装置，半导体器件，光盘及记录方法。
Wire bonding method, semiconductor device, capillary for wire bonding and ball bump forming method.
丝焊方法，半导体器件，丝焊的毛细管及球块形成方法。
Material for insulating film, coating varnish for insulating film, and insulating film and semiconductor device using the same.
绝缘膜用材料，绝缘膜用罩光清漆，以及绝缘膜和采用该膜或该清漆的半导体装置。
Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device.
多孔膜形成用组合物，该组合物的制备方法，多孔膜及半导体装置。
Semiconductor device, semiconductor wafer, chip size package, and methods of manufacturing and inspection therefor.
半导体器件，半导体晶片，芯片尺寸封装及制作和检测方法。
Semiconductor device, card, system, and methods of initializing and checking the authenticity and the identify of the semiconductor device.
半导体器件，卡，系统以及初始化和检验半导体器件的真实性和身份的方法。
Semiconductor device, and display device, driving method and electronic apparatus thereof.
半导体器件，显示器件，驱动方法及其电子装置。
Today ordinary thyristor, GTO and IGBT play an important role in the applications of power semiconductor device for medium-voltage, and high power levels.
在目前的中电压大功率应用领域，占主导地位的功率半导体器件有晶闸管、GTO和IGBT等。
This paper presents the building procedures of hydrodynamic model for submicron semiconductor device simulation.
主要讨论了亚微米半导体器件模拟的流体动力学模型方程的建立过程。
Based on the analysis of the semiconductor device simulation procedure, this paper proposed a popular design method of the device simulation software.
本文在对半导体器件模拟过程分析的基础上，提出了目前广为流行的器件模拟软件面向对象的设计和开发方法。
In this paper, we apply ADI and high-order compact finite difference method for large-scale asymmetric sparse matrix in semiconductor device simulation.
采用AD I与高阶紧致差分相结合的方法计算大型非对称稀疏矩阵，并实现了该算法在半导体器件模拟中的应用。
The transient behavior of a semiconductor device of heat conduction is considered.
考虑热引导半导体设备中的传输行为。
LPS is a joint-venture by a famous multinational company and a home state-own-enterprise founding in 1995, who produces surface mounting semiconductor device.
LPS公司于1995年由一家全球知名跨国企业与国内一家电子企业合资兴建，生产表面安装半导体元器件。
Thyristor is a high-power semiconductor device, and the standard of its rated current is temperature.
晶闸管属于大功率的半导体器件，决定其允许通过电流大小的标准之一是温度的高低。
The invention improves puncture voltage characteristic of the semiconductor device, in addition, collision ionization in the semiconductor device can be avoided.
本发明改善了半导体器件的击穿电压特性，此外，在本发明的半导体器件中可以避免碰撞电离现象的发生。
An active semiconductor device with three electrodes that may be either an amplifier or a switch.
一种有源半导体器件，有三个电极，可以是放大器。
Semiconductor device, semiconductor device manufacturing method, high carrier mobility transistor and light emitting device.
半导体器件，半导体器件制造方法，高载流子迁移率晶体管和发光器件。
A method of manufacturing a semiconductor device includes forming an insulation pattern over a substrate.
一种制造半导体器件的方法，包括，在衬底上形成绝缘图形。
Method for reducing metal, multilayer interconnection structure and manufacturing method for the same, and semiconductor device and manufacturing method for the same.
金属还原方法，多层互连结构及制法，半导体器件及制法。
A semiconductor device (10) has contact between the last interconnect layer (16) and the bond pad that includes a barrier metal (26) between the bond pad (28) and the last interconnect layer (16).
一种半导体器件(10)，具有在最后的互连层(16)和接合焊盘之间的接触，该接合焊盘包括接合焊盘(28)和最后的互连层(16)之间的阻挡金属(26)。
One aspect of the present invention is a method of forming a semiconductor device having copper metallization.
本发明的一个方面是形成具有铜金属化的半导体器件的方法。
A method is provided for testing a semiconductor device that includes both a digital (310) and analog (320) portion.
本发明提供一种用于测试包含数字部分(310)和模拟部分(320)两者的半导体装置的方法。
A method is described for fabricating and antifuse structure (100) integrated with a semiconductor device such as a FINFET or planar CMOS devise.
本发明提供了与如FINFET或平面CMOS器件的半导体器件集成的反熔断器结构(100)及其制造方法。
Also provided is a semiconductor device including a gate structure having a larger width at the top of the gate than the bottom of the gate.
并且本发明还提供了一种包括栅极结构的半导体器件，该栅极结构的栅极顶部宽度大于栅极底部宽度。
A memory cell and a data line are controlled with a reset signal, so that data can be reliably outputted in the semiconductor device.
存储单元和数据线用复位信号来控制，以使数据可在该半导体器件中被可靠地输出。
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