The SiC semiconductor device is fabricated by the method.
碳化硅半导体器件是捏造的方法。
The result is the Torrent chip, a semiconductor device that analyses genomes.
这一想法导致了Torrent芯片，一种可分析基因的半导体的诞生。
It is a kind of storage device using semiconductor device as storage medium.
它是一种以半导体芯片作为存储介质的存储器。
Optical disk device, semiconductor device, optical disk and recording method.
光盘装置，半导体器件，光盘及记录方法。
The transient behavior of a semiconductor device of heat conduction is considered.
考虑热引导半导体设备中的传输行为。
Semiconductor device, and display device, driving method and electronic apparatus thereof.
半导体器件，显示器件，驱动方法及其电子装置。
During producing semiconductor device, it is prepared by evaporating to most of device leader.
在半导体器件生产过程中，器件的引线大都是由蒸镀的方法来解决的。
An active semiconductor device with three electrodes that may be either an amplifier or a switch.
一种有源半导体器件，有三个电极，可以是放大器。
Wire bonding method, semiconductor device, capillary for wire bonding and ball bump forming method.
丝焊方法，半导体器件，丝焊的毛细管及球块形成方法。
Thyristor is a high-power semiconductor device, and the standard of its rated current is temperature.
晶闸管属于大功率的半导体器件，决定其允许通过电流大小的标准之一是温度的高低。
The vertical multijunction semiconductor device (VMJ) has a good infrared photoelectric characteristic.
垂重多重结半导体器件（VMJ）有良好的近红外光电特性。
A method of manufacturing a semiconductor device includes forming an insulation pattern over a substrate.
一种制造半导体器件的方法，包括，在衬底上形成绝缘图形。
Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device.
多孔膜形成用组合物，该组合物的制备方法，多孔膜及半导体装置。
One aspect of the present invention is a method of forming a semiconductor device having copper metallization.
本发明的一个方面是形成具有铜金属化的半导体器件的方法。
This paper presents the building procedures of hydrodynamic model for submicron semiconductor device simulation.
主要讨论了亚微米半导体器件模拟的流体动力学模型方程的建立过程。
Semiconductor device, semiconductor wafer, chip size package, and methods of manufacturing and inspection therefor.
半导体器件，半导体晶片，芯片尺寸封装及制作和检测方法。
A method is provided for testing a semiconductor device that includes both a digital (310) and analog (320) portion.
本发明提供一种用于测试包含数字部分(310)和模拟部分(320)两者的半导体装置的方法。
A semiconductor device may include a semiconductor substrate, one common gate electrode, and one gate insulating layer.
该半导体器件的一种包括半导体衬底、公共栅极电极和栅极绝缘层。
Silicone resin modified polyester(SP) is a kind of ultra-pure surface protection material used in semiconductor device.
聚酯改性硅漆（SP）是用于硅器件表面保护的高纯绝缘材料。
Voltage metering method, electric test method and device, and method for mfg. semiconductor device and device substrate.
电压测量方法，电测试方法和装置，半导体器件制造方法和器件衬底制造方法。
Semiconductor device, semiconductor device manufacturing method, high carrier mobility transistor and light emitting device.
半导体器件，半导体器件制造方法，高载流子迁移率晶体管和发光器件。
Material for insulating film, coating varnish for insulating film, and insulating film and semiconductor device using the same.
绝缘膜用材料，绝缘膜用罩光清漆，以及绝缘膜和采用该膜或该清漆的半导体装置。
A memory cell and a data line are controlled with a reset signal, so that data can be reliably outputted in the semiconductor device.
存储单元和数据线用复位信号来控制，以使数据可在该半导体器件中被可靠地输出。
Semiconductor device, card, system, and methods of initializing and checking the authenticity and the identify of the semiconductor device.
半导体器件，卡，系统以及初始化和检验半导体器件的真实性和身份的方法。
Also provided is a semiconductor device including a gate structure having a larger width at the top of the gate than the bottom of the gate.
并且本发明还提供了一种包括栅极结构的半导体器件，该栅极结构的栅极顶部宽度大于栅极底部宽度。
A method is described for fabricating and antifuse structure (100) integrated with a semiconductor device such as a FINFET or planar CMOS devise.
本发明提供了与如FINFET或平面CMOS器件的半导体器件集成的反熔断器结构(100)及其制造方法。
Porous membrane shaping composition, preparation method of porous membrane, porous membrane intercalation insulating film and semiconductor device.
多孔膜形成用组合物，多孔膜的制备方法，多孔膜、层间绝缘膜和半导体器件。
Semiconductor device simulation has manifested its ever-increasing importance for the design of miniature devices in VLSI end new discrete devices.
半导体器件模拟，对于设计VLSI中的微小尺寸器件或者是新型的半导体分立器件，都已越来越显得重要。
Transient excitation of a device followed by fourier decomposition is a calculating technique for finding the AC behavior of a semiconductor device.
基于傅里叶变换的瞬态激励法是一种模拟半导体器件交流特性的计算技术。
Transient excitation of a device followed by fourier decomposition is a calculating technique for finding the AC behavior of a semiconductor device.
基于傅里叶变换的瞬态激励法是一种模拟半导体器件交流特性的计算技术。
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