Semiconductor device, semiconductor device manufacturing method, high carrier mobility transistor and light emitting device.
半导体器件，半导体器件制造方法，高载流子迁移率晶体管和发光器件。
A method of manufacturing a semiconductor device includes forming an insulation pattern over a substrate.
一种制造半导体器件的方法，包括，在衬底上形成绝缘图形。
Further, it is an object of the present invention to provide a method for manufacturing a semiconductor device that is small-sized, thin, and lightweight.
此外，本发明的目的是提供小尺寸、薄型且重量轻的半导体器件的制造方法。
The invention relates to a manufacturing method of semiconductor device.
本发明涉及一种半导体器件的制造方法。
The invention provides a method for manufacturing semiconductor device.
本发明提供制造半导体装置的方法。
The present invention provides a thin film transistor in which a substantial length of a channel is shortened to miniaturize a semiconductor device and a manufacturing method thereof.
本发明提供一种薄膜晶体管及其制造方法，其中该晶体管的沟道的基本长度被缩短以微型化半导体装置。
Disclosed are a semiconductor device and a manufacturing method thereof.
本发明公开了一种半导体器件及其制造方法。
Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.
本发明提供了一种互补金属氧化物半导体（CMOS）装置及其制造方法。
Provided are an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor.
本发明提供氧化物半导体材料和其制造方法、电子装置和场效应晶体管。
Inorganic substrate with a thin silica type glass layer, method of manufacturing the aforementioned substrate, coating agent, and a semiconductor device.
具有二氧化硅类玻璃薄层的无机基底，制备前述基底的方法，涂布剂和半导体器件。
Method for reducing metal, multilayer interconnection structure and manufacturing method for the same, and semiconductor device and manufacturing method for the same.
金属还原方法，多层互连结构及制法，半导体器件及制法。
Solder film manufacturing method, heat sink furnished with solder film, and semiconductor-device-and-heat-sink junction.
焊料膜制造方法，装备有焊料膜的散热装置，以及半导体器件与散热装置的连接体。
Solder film manufacturing method, heat sink furnished with solder film, and semiconductor-device-and-heat-sink junction.
焊料膜制造方法，装备有焊料膜的散热装置，以及半导体器件与散热装置的连接体。
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