The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate.
该方法可以在衬底的硅表面上选择性地沉积外延含硅膜，或者在衬底上非选择 性地沉积含硅膜。
The method can selectively deposit an epitaxial silicon-containing film on a silicon surface of a substrate or, alternately, non-selectively deposit a silicon-containing film on a substrate.
该方法可以在衬底的硅表面上选择性地沉积外延含硅膜，或者在衬底上非选择 性地沉积含硅膜。
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